Injection Locking of Rotary Dissipative Solitons in Closed Traveling-Wave Field-Effect Transistor
Summary :
The injection locking properties of rotary dissipative solitons developed in a closed traveling-wave field-effect transistor (TWFET) are examined. A TWFET can support the waveform-invariant propagation of solitary pulses called dissipative solitons (DS) by balancing dispersion, nonlinearity, dissipation, and field-effect transistor gain. Applying sinusoidal signals to the closed TWFET assumes the injection-locked behavior of the rotary DS; the solitons' velocity is autonomously tuned to match the rotation and external frequencies. This study clarifies the qualitative properties of injection-locked DS using numerical and experimental approaches.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E103-C No.11 pp.693-696
- Publication Date
- 2020/11/01
- Publicized
- 2020/05/12
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.2020ECS6001
- Type of Manuscript
- BRIEF PAPER
- Category
- Electronic Circuits
Authors
Koichi NARAHARA
Kanagawa Institute of Technology
Keyword
Latest Issue
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Koichi NARAHARA, "Injection Locking of Rotary Dissipative Solitons in Closed Traveling-Wave Field-Effect Transistor" in IEICE TRANSACTIONS on Electronics,
vol. E103-C, no. 11, pp. 693-696, November 2020, doi: 10.1587/transele.2020ECS6001.
Abstract: The injection locking properties of rotary dissipative solitons developed in a closed traveling-wave field-effect transistor (TWFET) are examined. A TWFET can support the waveform-invariant propagation of solitary pulses called dissipative solitons (DS) by balancing dispersion, nonlinearity, dissipation, and field-effect transistor gain. Applying sinusoidal signals to the closed TWFET assumes the injection-locked behavior of the rotary DS; the solitons' velocity is autonomously tuned to match the rotation and external frequencies. This study clarifies the qualitative properties of injection-locked DS using numerical and experimental approaches.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2020ECS6001/_p
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@ARTICLE{e103-c_11_693,
author={Koichi NARAHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Injection Locking of Rotary Dissipative Solitons in Closed Traveling-Wave Field-Effect Transistor},
year={2020},
volume={E103-C},
number={11},
pages={693-696},
abstract={The injection locking properties of rotary dissipative solitons developed in a closed traveling-wave field-effect transistor (TWFET) are examined. A TWFET can support the waveform-invariant propagation of solitary pulses called dissipative solitons (DS) by balancing dispersion, nonlinearity, dissipation, and field-effect transistor gain. Applying sinusoidal signals to the closed TWFET assumes the injection-locked behavior of the rotary DS; the solitons' velocity is autonomously tuned to match the rotation and external frequencies. This study clarifies the qualitative properties of injection-locked DS using numerical and experimental approaches.},
keywords={},
doi={10.1587/transele.2020ECS6001},
ISSN={1745-1353},
month={November},}
Copy
TY - JOUR
TI - Injection Locking of Rotary Dissipative Solitons in Closed Traveling-Wave Field-Effect Transistor
T2 - IEICE TRANSACTIONS on Electronics
SP - 693
EP - 696
AU - Koichi NARAHARA
PY - 2020
DO - 10.1587/transele.2020ECS6001
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E103-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2020
AB - The injection locking properties of rotary dissipative solitons developed in a closed traveling-wave field-effect transistor (TWFET) are examined. A TWFET can support the waveform-invariant propagation of solitary pulses called dissipative solitons (DS) by balancing dispersion, nonlinearity, dissipation, and field-effect transistor gain. Applying sinusoidal signals to the closed TWFET assumes the injection-locked behavior of the rotary DS; the solitons' velocity is autonomously tuned to match the rotation and external frequencies. This study clarifies the qualitative properties of injection-locked DS using numerical and experimental approaches.
ER -
English
