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Masanori FUKUMOTO Yasushi NAITO Kazuhiro MATSUYAMA Hisashi OGAWA Koji MATSUOKA Takashi HORI Hiroyuki SAKAI Ichiro NAKAO Hisakazu KOTANI Hiroshi IWASAKI Michihiro INOUE
This paper describes a key technology of a small sized stacked capacitor cell to realize 16 MDRAM. The main feature of the technology is unique and highly productive double self-aligned contact process for bit line and for storage node, which provides reliable contacts with high immunity against process fluctuations such as overetching side-etching and pattern misalignment in photolithography. The cell made by this technology showed desirable characteristics for DRAM operation.