Laser diodes in the (Al, Ga, In) N system are attractive for many applications. Due to the wurtzite crystal structure, cleaved facets are not easily produced. We have investigated distributed feedback (DFB) laser diodes employing embedded dielectric gratings with the grating located above the active region. The dielectric gratings are incorporated via epitaxial lateral overgrowth. The DFB laser diodes had reduced threshold current densities over the etched cavity devices, with a minimum of 15 kA/cm2. The spectral emission width was considerably reduced for the DFB devices. Voltages for the DFB devices were high due to the presence of the Si3N4 grating within the p-type material.