Distributed Feedback Laser Diodes Employing Embedded Dielectric Gratings Located above the Active Region
Summary :
Laser diodes in the (Al, Ga, In) N system are attractive for many applications. Due to the wurtzite crystal structure, cleaved facets are not easily produced. We have investigated distributed feedback (DFB) laser diodes employing embedded dielectric gratings with the grating located above the active region. The dielectric gratings are incorporated via epitaxial lateral overgrowth. The DFB laser diodes had reduced threshold current densities over the etched cavity devices, with a minimum of 15 kA/cm2. The spectral emission width was considerably reduced for the DFB devices. Voltages for the DFB devices were high due to the presence of the Si3N4 grating within the p-type material.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E83-C No.4 pp.560-563
- Publication Date
- 2000/04/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section INVITED PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)
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Amber C. ABARE, Steven P. DENBAARS, Larry A. COLDREN, "Distributed Feedback Laser Diodes Employing Embedded Dielectric Gratings Located above the Active Region" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 4, pp. 560-563, April 2000, doi: .
Abstract: Laser diodes in the (Al, Ga, In) N system are attractive for many applications. Due to the wurtzite crystal structure, cleaved facets are not easily produced. We have investigated distributed feedback (DFB) laser diodes employing embedded dielectric gratings with the grating located above the active region. The dielectric gratings are incorporated via epitaxial lateral overgrowth. The DFB laser diodes had reduced threshold current densities over the etched cavity devices, with a minimum of 15 kA/cm2. The spectral emission width was considerably reduced for the DFB devices. Voltages for the DFB devices were high due to the presence of the Si3N4 grating within the p-type material.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_4_560/_p
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@ARTICLE{e83-c_4_560,
author={Amber C. ABARE, Steven P. DENBAARS, Larry A. COLDREN, },
journal={IEICE TRANSACTIONS on Electronics},
title={Distributed Feedback Laser Diodes Employing Embedded Dielectric Gratings Located above the Active Region},
year={2000},
volume={E83-C},
number={4},
pages={560-563},
abstract={Laser diodes in the (Al, Ga, In) N system are attractive for many applications. Due to the wurtzite crystal structure, cleaved facets are not easily produced. We have investigated distributed feedback (DFB) laser diodes employing embedded dielectric gratings with the grating located above the active region. The dielectric gratings are incorporated via epitaxial lateral overgrowth. The DFB laser diodes had reduced threshold current densities over the etched cavity devices, with a minimum of 15 kA/cm2. The spectral emission width was considerably reduced for the DFB devices. Voltages for the DFB devices were high due to the presence of the Si3N4 grating within the p-type material.},
keywords={},
doi={},
ISSN={},
month={April},}
Copy
TY - JOUR
TI - Distributed Feedback Laser Diodes Employing Embedded Dielectric Gratings Located above the Active Region
T2 - IEICE TRANSACTIONS on Electronics
SP - 560
EP - 563
AU - Amber C. ABARE
AU - Steven P. DENBAARS
AU - Larry A. COLDREN
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2000
AB - Laser diodes in the (Al, Ga, In) N system are attractive for many applications. Due to the wurtzite crystal structure, cleaved facets are not easily produced. We have investigated distributed feedback (DFB) laser diodes employing embedded dielectric gratings with the grating located above the active region. The dielectric gratings are incorporated via epitaxial lateral overgrowth. The DFB laser diodes had reduced threshold current densities over the etched cavity devices, with a minimum of 15 kA/cm2. The spectral emission width was considerably reduced for the DFB devices. Voltages for the DFB devices were high due to the presence of the Si3N4 grating within the p-type material.
ER -
English
