In order to fabricate nano-gap electrodes for organic field effect transistors (OFETs), we proposed a simple technique to fabricate the nano-gap electrodes using over etching method. The gap was controlled about 250 nm on Si substrate. We have succeeded making nano-gap electrodes whose resistance was 7.5 TΩ. Then, the nano-gap electrodes as source-drain electrodes were applied to OFETs and characteristics were measured. The Id-Vd characteristics of the similar value as OFETs with micron channel were observed.

We fabricate the organic light-emitting devices (OLEDs), which have dot array structures with organic layer, and discuss the improvement of coupling-out efficiency.