We have investigated both the film thickness and surface potential of organic semiconductors deposited on two kinds of electrodes by the simultaneous observation with the dynamic force microscopy (DFM)/Kelvin-probe force microscope (KFM). To clarify the interfacial properties of organic semiconductor, we fabricated samples that imitated the organic light emitting diode (OLED) structure by depositing bis [$N,N '$-(1-naphthyl)-$N,N '$-phenyl] benzidine ($alpha$-NPD) and tris (8-hydroxyquinolinato) aluminum (Alq$_{3}$), respectively, on indium-tin-oxide (ITO) as anode and aluminum (Al) as cathode by the vacuum evaporation deposition using intersecting metal shadow masks. This deposition technique enables us to fabricate four different areas in the same substrate. The crossover area of the deposited thin films were measured by the DFM/KFM, the energy band diagrams were depicted and we considered that the charge behavior of the organic semiconductor depended on the material and the structure.

Scanning near-field optical microscopy (SNOM) combined with Kelvin force microscopy (KFM) using a microfabricated force-sensing cantilever with a lead zirconate titanate (PZT) thin film as an integrated deflection sensor have been developed. We applied the frequency modulation (FM) detection method to this setup to increase the detection sensitivity of electrostatic forces between a probe tip and a sample. Latex particles dispersed in a polyvinylalcohol (PVA) thin film deposited onto a glass substrate were stably imaged with the SNOM while both local optical and electrical properties of a ferroelectric thin film were successfully investigated.

In order to fabricate nano-gap electrodes for organic field effect transistors (OFETs), we proposed a simple technique to fabricate the nano-gap electrodes using over etching method. The gap was controlled about 250 nm on Si substrate. We have succeeded making nano-gap electrodes whose resistance was 7.5 TΩ. Then, the nano-gap electrodes as source-drain electrodes were applied to OFETs and characteristics were measured. The Id-Vd characteristics of the similar value as OFETs with micron channel were observed.

This paper focuses on the processing of carbon nanotubes (CNTs) alignment as molecular bridge. A magnitude of an alternative voltage of about 1 V with 1 MHz was applied between two electrodes containing CNTs in suspension. The CNT bundles were well stretched along the field line distribution. Two kinds of directions could be distinguished around the electrode: the parallel and the Gaussian. On the other hand, different lengths of CNT bundles were aligned from one electrode side to the other. Those which were more than 1 µm reached both sides of electrodes while the short one did not but followed the Gaussian distribution of electric field. The short CNTs represent an increasing interest of study as far as their flexibility, mechanical and electrical properties are concerned. That's basically because one of their sides ended on the substrate. Among the advantages of the alignment of the CNT is to control the current flux and the thermal conductivity in composite resins or as new materials for the development of novel single-molecular transistors.

We fabricate the organic light-emitting devices (OLEDs), which have dot array structures with organic layer, and discuss the improvement of coupling-out efficiency.