Characteristics of Organic Field Effect Transistors Using Simple Fabricated Nano-Gap Electrode
Summary :
In order to fabricate nano-gap electrodes for organic field effect transistors (OFETs), we proposed a simple technique to fabricate the nano-gap electrodes using over etching method. The gap was controlled about 250 nm on Si substrate. We have succeeded making nano-gap electrodes whose resistance was 7.5 TΩ. Then, the nano-gap electrodes as source-drain electrodes were applied to OFETs and characteristics were measured. The Id-Vd characteristics of the similar value as OFETs with micron channel were observed.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E87-C No.12 pp.2114-2115
- Publication Date
- 2004/12/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section LETTER (Special Section on Recent Progress in Organic Molecular Electronics)
- Category
- Fabrication of Organic Nano-devices
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Masayuki YAHIRO, Kenji ISHIDA, Kazumi MATSUSHIGE, "Characteristics of Organic Field Effect Transistors Using Simple Fabricated Nano-Gap Electrode" in IEICE TRANSACTIONS on Electronics,
vol. E87-C, no. 12, pp. 2114-2115, December 2004, doi: .
Abstract: In order to fabricate nano-gap electrodes for organic field effect transistors (OFETs), we proposed a simple technique to fabricate the nano-gap electrodes using over etching method. The gap was controlled about 250 nm on Si substrate. We have succeeded making nano-gap electrodes whose resistance was 7.5 TΩ. Then, the nano-gap electrodes as source-drain electrodes were applied to OFETs and characteristics were measured. The Id-Vd characteristics of the similar value as OFETs with micron channel were observed.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e87-c_12_2114/_p
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@ARTICLE{e87-c_12_2114,
author={Masayuki YAHIRO, Kenji ISHIDA, Kazumi MATSUSHIGE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Characteristics of Organic Field Effect Transistors Using Simple Fabricated Nano-Gap Electrode},
year={2004},
volume={E87-C},
number={12},
pages={2114-2115},
abstract={In order to fabricate nano-gap electrodes for organic field effect transistors (OFETs), we proposed a simple technique to fabricate the nano-gap electrodes using over etching method. The gap was controlled about 250 nm on Si substrate. We have succeeded making nano-gap electrodes whose resistance was 7.5 TΩ. Then, the nano-gap electrodes as source-drain electrodes were applied to OFETs and characteristics were measured. The Id-Vd characteristics of the similar value as OFETs with micron channel were observed.},
keywords={},
doi={},
ISSN={},
month={December},}
Copy
TY - JOUR
TI - Characteristics of Organic Field Effect Transistors Using Simple Fabricated Nano-Gap Electrode
T2 - IEICE TRANSACTIONS on Electronics
SP - 2114
EP - 2115
AU - Masayuki YAHIRO
AU - Kenji ISHIDA
AU - Kazumi MATSUSHIGE
PY - 2004
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E87-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2004
AB - In order to fabricate nano-gap electrodes for organic field effect transistors (OFETs), we proposed a simple technique to fabricate the nano-gap electrodes using over etching method. The gap was controlled about 250 nm on Si substrate. We have succeeded making nano-gap electrodes whose resistance was 7.5 TΩ. Then, the nano-gap electrodes as source-drain electrodes were applied to OFETs and characteristics were measured. The Id-Vd characteristics of the similar value as OFETs with micron channel were observed.
ER -
English
