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Masayuki YAHIRO Kenji ISHIDA Kazumi MATSUSHIGE
In order to fabricate nano-gap electrodes for organic field effect transistors (OFETs), we proposed a simple technique to fabricate the nano-gap electrodes using over etching method. The gap was controlled about 250 nm on Si substrate. We have succeeded making nano-gap electrodes whose resistance was 7.5 TΩ. Then, the nano-gap electrodes as source-drain electrodes were applied to OFETs and characteristics were measured. The Id-Vd characteristics of the similar value as OFETs with micron channel were observed.