This paper describes a new evaluation technique for Si surfaces. A laser/microwave method using two lasers of different wavelengths for carrier injection is proposed to evaluate Si surfaces. With this evaluation system, the effect of impedance mismatching between the microwave probe and the Si wafer can be eliminated. These lasers used in this experiment are He-Ne (wavelength633 nm, penetration depth3 µm) and YAG lasers (wavelength1060 nm, penetration depth500 µm). Using a microwave probe, the amount of injected excess carriers can be detected. These carrier concentrations are mainly dependent on the condition of the surface, when carriers are excited by the He-Ne laser, and the condition of the bulk region, when carriers are excited by the YAG laser. We refer to microwave intensities detected by the He-Ne and YAG lasers as the surface-recombination-velocity-related microwave intensity (SRMI) and bulk-related microwave intensity (BRMI), respectively. We refer to the difference between SRMI and BRMI as relative SRMI (R-SRMI), which is closely related to the surface condition. A theoretical analysis is performed and several experiments are conducted to evaluate Si surfaces. It is found that the R-SRMI method is better suited to surface evaluation then conventional lifetime measurements, and that the rdliability and reproducibility of measurements are improved.