A Ge/Si structure grown by chemical vapor deposition (CVD) is angle-lapped and characterized by the micro-Raman spectroscopy. Near the interface, the phonon mode due to the Si-Ge bond is clearly observed, which indicates that a SiGe alloy is formed by the solid-phase interdiffusion at the interface. The thickness of the interfacial alloy layer is about 0.2 µm. Amount of residual strain is estimated by comparing the measured phonon frequencies with those predicted from the composition profie, but the shift due to the residual strain is not appreciable. Both the interdiffusion at the interface and the nearly complete relaxation of the lattice mismatch are attributed to the high growth temperature of the CVD sample.

Transport rate of GaSb in a closed tube vapor phase growth system with iodine as a transport agent was calculated thermodynamically. The calculated maximum transport rate was obtained at iodine density of 0.01-0.02 mg/cm3 in the growth temperature range of 550-600. The calculation was compared with the experimental result of GaSb. The calculated iodine density at which the maximum transport rate was obtained showed a good agreement with the experiment.

The reflectivity spectrum of VPE-AlxGa1xSb has been measured over the photon energy range from 1.8 eV to 5 eV. Three peaks which correspond to the -point transition, the spin orbit splitting at the -point, and the X-point transition have been observed in the measured spectrum. The optical constants have been derived by means of the Kramers-Kroig analysis of the reflectivity spectrum.

In this study, we evaluate the electrical characteristics of the SOI layer made by the wafer bonding method using a laser/microwave method. We use a He-Ne laser pulse for the photoconductivity modulation method and a semiconductor laser diode for the photoconductivity decay method as the carrier injection light source. The detected signal intensity at the void area decreases as compared with that at the center area of the SOI layer where there are no voids. The positions of the voids revealed by the proposed method are in good agreement with those by X-ray topography. We also measure the lifetime by the photoconductivity decay method using a laser diode. The lifetime at the void area is much shorter than that at the center area. It is considered that the decrease in the detected signal intensity at the void area is due to reduction in the minority carrier lifetime.

This paper describes a new evaluation technique for Si surfaces. A laser/microwave method using two lasers of different wavelengths for carrier injection is proposed to evaluate Si surfaces. With this evaluation system, the effect of impedance mismatching between the microwave probe and the Si wafer can be eliminated. These lasers used in this experiment are He-Ne (wavelength633 nm, penetration depth3 µm) and YAG lasers (wavelength1060 nm, penetration depth500 µm). Using a microwave probe, the amount of injected excess carriers can be detected. These carrier concentrations are mainly dependent on the condition of the surface, when carriers are excited by the He-Ne laser, and the condition of the bulk region, when carriers are excited by the YAG laser. We refer to microwave intensities detected by the He-Ne and YAG lasers as the surface-recombination-velocity-related microwave intensity (SRMI) and bulk-related microwave intensity (BRMI), respectively. We refer to the difference between SRMI and BRMI as relative SRMI (R-SRMI), which is closely related to the surface condition. A theoretical analysis is performed and several experiments are conducted to evaluate Si surfaces. It is found that the R-SRMI method is better suited to surface evaluation then conventional lifetime measurements, and that the rdliability and reproducibility of measurements are improved.

Silicon-on-insulator (SOI) films fabricated by the wafer bonding technique were studies with capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements. For our expereiments, two kinds of SOI wafers were prepared. Many voids were present in one sample (void sample), but few voids were in the other sample (no void sample). Before annealing, two DLTS peaks (Ec-0.48 eV and Ec-0.38 eV) were observed in the SOI layer of the void sample. For the no void sample, different two DLTS peaks (Ec-0.16 eV and Ec-0.12 eV) were observed. The trap with an activation energy of 0.48 eV was annealed out after 450 annealing for 24 h. On the other hand, other traps were annealed out after 450 annealing for several hours. During annealing at 450, thermal donors (TDs) were formed simultaneously. In usual CZ silicon, a DLTS peak of TD was observed around 60 K. In the no void sample, however, a TD peak was observed at a temperature lower than 30 K. This TD was annihilated by rapid thermal annealing. This suggests that the TD with a shallower level was formed in the no void sample after annealing at 450.

A laser/microwave method using two lasers of different wavelengths for carrier excitation is proposed to evaluate Si surfaces. These constitute a He-Ne laser (wavelength=633 nm, penetration depth=3 µm) and a YAG laser (wavelength=1060 nm, penetration depth=500 µm). Using a microwave probe, the amount of excited carriers can be detected. The carrier concentration is mainly dependent on the condition of the surface when carriers are excited by the He-Ne laser, as well as on the condition of the bulk region when carriers are excited by the YAG laser. Microwave intensities detected under the He-Ne and the YAG lasers illumination are referred to as the surface-recombination-velocity-related microwave intensity (SRMI) and the bulk-related microwave intensity (BRMI), respectively. The difference between SRMI and BRMI is called relateve SRMI (R-SRMI), and is closely related to the condition of the surface and surface active region. We evaluate the surfaces of the samples after plasma and wet etching to remove the photoresist layer. And we evaluate the surfaces of the samples after heat or HF treatment which is done to recover the damage introduced by plasma etching. It was found that the R-SRMI method is better suited to surface evaluation than conventional lifetime measurements.