IEICE TRANSACTIONS on Electronics
Contactless Evaluation Using a Laser/Microwave Method for the Silicon-on-Insulator Made by Wafer Bonding
Summary :
In this study, we evaluate the electrical characteristics of the SOI layer made by the wafer bonding method using a laser/microwave method. We use a He-Ne laser pulse for the photoconductivity modulation method and a semiconductor laser diode for the photoconductivity decay method as the carrier injection light source. The detected signal intensity at the void area decreases as compared with that at the center area of the SOI layer where there are no voids. The positions of the voids revealed by the proposed method are in good agreement with those by X-ray topography. We also measure the lifetime by the photoconductivity decay method using a laser diode. The lifetime at the void area is much shorter than that at the center area. It is considered that the decrease in the detected signal intensity at the void area is due to reduction in the minority carrier lifetime.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E75-C No.9 pp.1043-1048
- Publication Date
- 1992/09/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Silicon Devices and Materials)
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Akira USAMI, Takahisa NAKAI, Hideki FUJIWARA, Shun-ichiro ISHIGAMI, Takao WADA, "Contactless Evaluation Using a Laser/Microwave Method for the Silicon-on-Insulator Made by Wafer Bonding" in IEICE TRANSACTIONS on Electronics,
vol. E75-C, no. 9, pp. 1043-1048, September 1992, doi: .
Abstract: In this study, we evaluate the electrical characteristics of the SOI layer made by the wafer bonding method using a laser/microwave method. We use a He-Ne laser pulse for the photoconductivity modulation method and a semiconductor laser diode for the photoconductivity decay method as the carrier injection light source. The detected signal intensity at the void area decreases as compared with that at the center area of the SOI layer where there are no voids. The positions of the voids revealed by the proposed method are in good agreement with those by X-ray topography. We also measure the lifetime by the photoconductivity decay method using a laser diode. The lifetime at the void area is much shorter than that at the center area. It is considered that the decrease in the detected signal intensity at the void area is due to reduction in the minority carrier lifetime.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_9_1043/_p
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@ARTICLE{e75-c_9_1043,
author={Akira USAMI, Takahisa NAKAI, Hideki FUJIWARA, Shun-ichiro ISHIGAMI, Takao WADA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Contactless Evaluation Using a Laser/Microwave Method for the Silicon-on-Insulator Made by Wafer Bonding},
year={1992},
volume={E75-C},
number={9},
pages={1043-1048},
abstract={In this study, we evaluate the electrical characteristics of the SOI layer made by the wafer bonding method using a laser/microwave method. We use a He-Ne laser pulse for the photoconductivity modulation method and a semiconductor laser diode for the photoconductivity decay method as the carrier injection light source. The detected signal intensity at the void area decreases as compared with that at the center area of the SOI layer where there are no voids. The positions of the voids revealed by the proposed method are in good agreement with those by X-ray topography. We also measure the lifetime by the photoconductivity decay method using a laser diode. The lifetime at the void area is much shorter than that at the center area. It is considered that the decrease in the detected signal intensity at the void area is due to reduction in the minority carrier lifetime.},
keywords={},
doi={},
ISSN={},
month={September},}
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TY - JOUR
TI - Contactless Evaluation Using a Laser/Microwave Method for the Silicon-on-Insulator Made by Wafer Bonding
T2 - IEICE TRANSACTIONS on Electronics
SP - 1043
EP - 1048
AU - Akira USAMI
AU - Takahisa NAKAI
AU - Hideki FUJIWARA
AU - Shun-ichiro ISHIGAMI
AU - Takao WADA
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1992
AB - In this study, we evaluate the electrical characteristics of the SOI layer made by the wafer bonding method using a laser/microwave method. We use a He-Ne laser pulse for the photoconductivity modulation method and a semiconductor laser diode for the photoconductivity decay method as the carrier injection light source. The detected signal intensity at the void area decreases as compared with that at the center area of the SOI layer where there are no voids. The positions of the voids revealed by the proposed method are in good agreement with those by X-ray topography. We also measure the lifetime by the photoconductivity decay method using a laser diode. The lifetime at the void area is much shorter than that at the center area. It is considered that the decrease in the detected signal intensity at the void area is due to reduction in the minority carrier lifetime.
ER -
English
