Characterization of a Silicon Wafer after the Removal of Photoresist Layer Using Two Lasers of Different Wavelengths

Akira USAMI; Hideki FUJIWARA; Takahisa NAKAI; Kazunori MATSUKI; Tsutomu TAKEUCHI; Takao WADA

Characterization of a Silicon Wafer after the Removal of Photoresist Layer Using Two Lasers of Different Wavelengths

Akira USAMI, Hideki FUJIWARA, Takahisa NAKAI, Kazunori MATSUKI, Tsutomu TAKEUCHI, Takao WADA

Full Text Views

0

Cite this

Summary :

A laser/microwave method using two lasers of different wavelengths for carrier excitation is proposed to evaluate Si surfaces. These constitute a He-Ne laser (wavelength=633 nm, penetration depth=3 µm) and a YAG laser (wavelength=1060 nm, penetration depth=500 µm). Using a microwave probe, the amount of excited carriers can be detected. The carrier concentration is mainly dependent on the condition of the surface when carriers are excited by the He-Ne laser, as well as on the condition of the bulk region when carriers are excited by the YAG laser. Microwave intensities detected under the He-Ne and the YAG lasers illumination are referred to as the surface-recombination-velocity-related microwave intensity (SRMI) and the bulk-related microwave intensity (BRMI), respectively. The difference between SRMI and BRMI is called relateve SRMI (R-SRMI), and is closely related to the condition of the surface and surface active region. We evaluate the surfaces of the samples after plasma and wet etching to remove the photoresist layer. And we evaluate the surfaces of the samples after heat or HF treatment which is done to recover the damage introduced by plasma etching. It was found that the R-SRMI method is better suited to surface evaluation than conventional lifetime measurements.

Publication: IEICE TRANSACTIONS on Electronics Vol.E75-C No.9 pp.978-985

Publication Date: 1992/09/25

Publicized

Online ISSN

DOI

Type of Manuscript: Special Section PAPER (Special Issue on Silicon Devices and Materials)

Category

Cite this

Copy

Akira USAMI, Hideki FUJIWARA, Takahisa NAKAI, Kazunori MATSUKI, Tsutomu TAKEUCHI, Takao WADA, "Characterization of a Silicon Wafer after the Removal of Photoresist Layer Using Two Lasers of Different Wavelengths" in IEICE TRANSACTIONS on Electronics, vol. E75-C, no. 9, pp. 978-985, September 1992, doi: .
Abstract: A laser/microwave method using two lasers of different wavelengths for carrier excitation is proposed to evaluate Si surfaces. These constitute a He-Ne laser (wavelength=633 nm, penetration depth=3 µm) and a YAG laser (wavelength=1060 nm, penetration depth=500 µm). Using a microwave probe, the amount of excited carriers can be detected. The carrier concentration is mainly dependent on the condition of the surface when carriers are excited by the He-Ne laser, as well as on the condition of the bulk region when carriers are excited by the YAG laser. Microwave intensities detected under the He-Ne and the YAG lasers illumination are referred to as the surface-recombination-velocity-related microwave intensity (SRMI) and the bulk-related microwave intensity (BRMI), respectively. The difference between SRMI and BRMI is called relateve SRMI (R-SRMI), and is closely related to the condition of the surface and surface active region. We evaluate the surfaces of the samples after plasma and wet etching to remove the photoresist layer. And we evaluate the surfaces of the samples after heat or HF treatment which is done to recover the damage introduced by plasma etching. It was found that the R-SRMI method is better suited to surface evaluation than conventional lifetime measurements.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_9_978/_p

Copy

@ARTICLE{e75-c_9_978,
author={Akira USAMI, Hideki FUJIWARA, Takahisa NAKAI, Kazunori MATSUKI, Tsutomu TAKEUCHI, Takao WADA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Characterization of a Silicon Wafer after the Removal of Photoresist Layer Using Two Lasers of Different Wavelengths},
year={1992},
volume={E75-C},
number={9},
pages={978-985},
abstract={A laser/microwave method using two lasers of different wavelengths for carrier excitation is proposed to evaluate Si surfaces. These constitute a He-Ne laser (wavelength=633 nm, penetration depth=3 µm) and a YAG laser (wavelength=1060 nm, penetration depth=500 µm). Using a microwave probe, the amount of excited carriers can be detected. The carrier concentration is mainly dependent on the condition of the surface when carriers are excited by the He-Ne laser, as well as on the condition of the bulk region when carriers are excited by the YAG laser. Microwave intensities detected under the He-Ne and the YAG lasers illumination are referred to as the surface-recombination-velocity-related microwave intensity (SRMI) and the bulk-related microwave intensity (BRMI), respectively. The difference between SRMI and BRMI is called relateve SRMI (R-SRMI), and is closely related to the condition of the surface and surface active region. We evaluate the surfaces of the samples after plasma and wet etching to remove the photoresist layer. And we evaluate the surfaces of the samples after heat or HF treatment which is done to recover the damage introduced by plasma etching. It was found that the R-SRMI method is better suited to surface evaluation than conventional lifetime measurements.},
keywords={},
doi={},
ISSN={},
month={September},}

Copy

TY - JOUR
TI - Characterization of a Silicon Wafer after the Removal of Photoresist Layer Using Two Lasers of Different Wavelengths
T2 - IEICE TRANSACTIONS on Electronics
SP - 978
EP - 985
AU - Akira USAMI
AU - Hideki FUJIWARA
AU - Takahisa NAKAI
AU - Kazunori MATSUKI
AU - Tsutomu TAKEUCHI
AU - Takao WADA
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1992
AB - A laser/microwave method using two lasers of different wavelengths for carrier excitation is proposed to evaluate Si surfaces. These constitute a He-Ne laser (wavelength=633 nm, penetration depth=3 µm) and a YAG laser (wavelength=1060 nm, penetration depth=500 µm). Using a microwave probe, the amount of excited carriers can be detected. The carrier concentration is mainly dependent on the condition of the surface when carriers are excited by the He-Ne laser, as well as on the condition of the bulk region when carriers are excited by the YAG laser. Microwave intensities detected under the He-Ne and the YAG lasers illumination are referred to as the surface-recombination-velocity-related microwave intensity (SRMI) and the bulk-related microwave intensity (BRMI), respectively. The difference between SRMI and BRMI is called relateve SRMI (R-SRMI), and is closely related to the condition of the surface and surface active region. We evaluate the surfaces of the samples after plasma and wet etching to remove the photoresist layer. And we evaluate the surfaces of the samples after heat or HF treatment which is done to recover the damage introduced by plasma etching. It was found that the R-SRMI method is better suited to surface evaluation than conventional lifetime measurements.
ER -