In this paper some new results for analog hardware realization of secure communication system using chaos synchronization have been presented. In particular the effect of the use of transmission line as channel has been considered assuming practical implementation. The influence of the loss of transmission line and mismatching on synchronization has been investigated in chaotic systems based on the Pecora-Carroll concept. It has been shown that desynchronization due to loss can be checked by using an amplifier with appropriate gain. Moreover the bit error rate (BER) has been evaluated in a digital communication system based on the principle of chaotic masking.

A laser/microwave method using two lasers of different wavelengths for carrier excitation is proposed to evaluate Si surfaces. These constitute a He-Ne laser (wavelength=633 nm, penetration depth=3 µm) and a YAG laser (wavelength=1060 nm, penetration depth=500 µm). Using a microwave probe, the amount of excited carriers can be detected. The carrier concentration is mainly dependent on the condition of the surface when carriers are excited by the He-Ne laser, as well as on the condition of the bulk region when carriers are excited by the YAG laser. Microwave intensities detected under the He-Ne and the YAG lasers illumination are referred to as the surface-recombination-velocity-related microwave intensity (SRMI) and the bulk-related microwave intensity (BRMI), respectively. The difference between SRMI and BRMI is called relateve SRMI (R-SRMI), and is closely related to the condition of the surface and surface active region. We evaluate the surfaces of the samples after plasma and wet etching to remove the photoresist layer. And we evaluate the surfaces of the samples after heat or HF treatment which is done to recover the damage introduced by plasma etching. It was found that the R-SRMI method is better suited to surface evaluation than conventional lifetime measurements.

This paper describes a new evaluation technique for Si surfaces. A laser/microwave method using two lasers of different wavelengths for carrier injection is proposed to evaluate Si surfaces. With this evaluation system, the effect of impedance mismatching between the microwave probe and the Si wafer can be eliminated. These lasers used in this experiment are He-Ne (wavelength633 nm, penetration depth3 µm) and YAG lasers (wavelength1060 nm, penetration depth500 µm). Using a microwave probe, the amount of injected excess carriers can be detected. These carrier concentrations are mainly dependent on the condition of the surface, when carriers are excited by the He-Ne laser, and the condition of the bulk region, when carriers are excited by the YAG laser. We refer to microwave intensities detected by the He-Ne and YAG lasers as the surface-recombination-velocity-related microwave intensity (SRMI) and bulk-related microwave intensity (BRMI), respectively. We refer to the difference between SRMI and BRMI as relative SRMI (R-SRMI), which is closely related to the surface condition. A theoretical analysis is performed and several experiments are conducted to evaluate Si surfaces. It is found that the R-SRMI method is better suited to surface evaluation then conventional lifetime measurements, and that the rdliability and reproducibility of measurements are improved.