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Transport rate of GaSb in a closed tube vapor phase growth system with iodine as a transport agent was calculated thermodynamically. The calculated maximum transport rate was obtained at iodine density of 0.01-0.02 mg/cm3 in the growth temperature range of 550-600. The calculation was compared with the experimental result of GaSb. The calculated iodine density at which the maximum transport rate was obtained showed a good agreement with the experiment.
The reflectivity spectrum of VPE-AlxGa1xSb has been measured over the photon energy range from 1.8 eV to 5 eV. Three peaks which correspond to the -point transition, the spin orbit splitting at the -point, and the X-point transition have been observed in the measured spectrum. The optical constants have been derived by means of the Kramers-Kroig analysis of the reflectivity spectrum.
A chemical depth profile of anodic oxide on GaSb was investigated by using XPS method. The constant current anodic oxidation was able to grow thick oxide layers of several thousand angstroms. And the oxide thickness was controlled well by the terminating voltage. The oxidized gallium and the oxidized antimony were distributed uniformly throughout the oxide layer. And there was less pile-up of the elemental antimony at the oxide-semiconductor interface.