IEICE TRANSACTIONS on transactions
Chemical Depth Profile of Anodic Oxide on GaSb Using XPS Method
Summary :
A chemical depth profile of anodic oxide on GaSb was investigated by using XPS method. The constant current anodic oxidation was able to grow thick oxide layers of several thousand angstroms. And the oxide thickness was controlled well by the terminating voltage. The oxidized gallium and the oxidized antimony were distributed uniformly throughout the oxide layer. And there was less pile-up of the elemental antimony at the oxide-semiconductor interface.
- Publication
- IEICE TRANSACTIONS on transactions Vol.E73-E No.2 pp.198-199
- Publication Date
- 1990/02/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- LETTER
- Category
- Semiconductor Materials and Devices
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Noboru KITAMURA, "Chemical Depth Profile of Anodic Oxide on GaSb Using XPS Method" in IEICE TRANSACTIONS on transactions,
vol. E73-E, no. 2, pp. 198-199, February 1990, doi: .
Abstract: A chemical depth profile of anodic oxide on GaSb was investigated by using XPS method. The constant current anodic oxidation was able to grow thick oxide layers of several thousand angstroms. And the oxide thickness was controlled well by the terminating voltage. The oxidized gallium and the oxidized antimony were distributed uniformly throughout the oxide layer. And there was less pile-up of the elemental antimony at the oxide-semiconductor interface.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e73-e_2_198/_p
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@ARTICLE{e73-e_2_198,
author={Noboru KITAMURA, },
journal={IEICE TRANSACTIONS on transactions},
title={Chemical Depth Profile of Anodic Oxide on GaSb Using XPS Method},
year={1990},
volume={E73-E},
number={2},
pages={198-199},
abstract={A chemical depth profile of anodic oxide on GaSb was investigated by using XPS method. The constant current anodic oxidation was able to grow thick oxide layers of several thousand angstroms. And the oxide thickness was controlled well by the terminating voltage. The oxidized gallium and the oxidized antimony were distributed uniformly throughout the oxide layer. And there was less pile-up of the elemental antimony at the oxide-semiconductor interface.},
keywords={},
doi={},
ISSN={},
month={February},}
Copy
TY - JOUR
TI - Chemical Depth Profile of Anodic Oxide on GaSb Using XPS Method
T2 - IEICE TRANSACTIONS on transactions
SP - 198
EP - 199
AU - Noboru KITAMURA
PY - 1990
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E73-E
IS - 2
JA - IEICE TRANSACTIONS on transactions
Y1 - February 1990
AB - A chemical depth profile of anodic oxide on GaSb was investigated by using XPS method. The constant current anodic oxidation was able to grow thick oxide layers of several thousand angstroms. And the oxide thickness was controlled well by the terminating voltage. The oxidized gallium and the oxidized antimony were distributed uniformly throughout the oxide layer. And there was less pile-up of the elemental antimony at the oxide-semiconductor interface.
ER -
English
