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Jialin WU Katsunori MAKIHARA Hai ZHANG Noriyuki TAOKA Akio OHTA Seiichi MIYAZAKI
We fabricated Fe-silicide nanodots (NDs) on an ultrathin SiO2 layer and evaluated changes in electron transport properties with and without magnetic field application. High-density NDs with an areal density as high as ∼1011cm-2 were formed on thermally grown SiO2 by exposing ultrathin Fe/Si-NDs structures to a remote H2 plasma without external heating. In electron transport properties related to current-time characteristics for a diode with Fe electrode and charging energy to NDs, clear changes in current levels through NDs and electron injection modulation of NDs depending on intensity of magnetic fields were observed.
Katsunori MAKIHARA Tatsuya TAKEMOTO Shuji OBAYASHI Akio OHTA Noriyuki TAOKA Seiichi MIYAZAKI
We have fabricated two-tiered heterostructures consisting of phosphorus δ-doped Si quantum dots (Si-QDs) and undoped Si-QDs and studied their electron field emission properties. Electron emission was observed from the P-doped Si-QDs stack formed on the undoped Si-QDs stack by applying a forward bias of ∼6 V, which was lower than that for pure Si-QDs stack. This result is attributed to electric field concentration on the upper P-doped Si-QD layers beneath the layers of the undoped Si-QDs stack due to the introduction of phosphorus atom into the Si-QDs, which was positively charged due to the ionized P donor. The results lead to the development of planar-type electron emission devices with a low-voltage operation.