Study on Electron Emission from Phosphorus δ-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures
Summary :
We have fabricated two-tiered heterostructures consisting of phosphorus δ-doped Si quantum dots (Si-QDs) and undoped Si-QDs and studied their electron field emission properties. Electron emission was observed from the P-doped Si-QDs stack formed on the undoped Si-QDs stack by applying a forward bias of ∼6 V, which was lower than that for pure Si-QDs stack. This result is attributed to electric field concentration on the upper P-doped Si-QD layers beneath the layers of the undoped Si-QDs stack due to the introduction of phosphorus atom into the Si-QDs, which was positively charged due to the ionized P donor. The results lead to the development of planar-type electron emission devices with a low-voltage operation.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E105-C No.10 pp.610-615
- Publication Date
- 2022/10/01
- Publicized
- 2022/04/26
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.2021FUP0006
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
Authors
Katsunori MAKIHARA
Nagoya University
Tatsuya TAKEMOTO
Nagoya University
Shuji OBAYASHI
Nagoya University
Akio OHTA
Nagoya University
Noriyuki TAOKA
Nagoya University
Seiichi MIYAZAKI
Nagoya University
Keyword
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Katsunori MAKIHARA, Tatsuya TAKEMOTO, Shuji OBAYASHI, Akio OHTA, Noriyuki TAOKA, Seiichi MIYAZAKI, "Study on Electron Emission from Phosphorus δ-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures" in IEICE TRANSACTIONS on Electronics,
vol. E105-C, no. 10, pp. 610-615, October 2022, doi: 10.1587/transele.2021FUP0006.
Abstract: We have fabricated two-tiered heterostructures consisting of phosphorus δ-doped Si quantum dots (Si-QDs) and undoped Si-QDs and studied their electron field emission properties. Electron emission was observed from the P-doped Si-QDs stack formed on the undoped Si-QDs stack by applying a forward bias of ∼6 V, which was lower than that for pure Si-QDs stack. This result is attributed to electric field concentration on the upper P-doped Si-QD layers beneath the layers of the undoped Si-QDs stack due to the introduction of phosphorus atom into the Si-QDs, which was positively charged due to the ionized P donor. The results lead to the development of planar-type electron emission devices with a low-voltage operation.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2021FUP0006/_p
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@ARTICLE{e105-c_10_610,
author={Katsunori MAKIHARA, Tatsuya TAKEMOTO, Shuji OBAYASHI, Akio OHTA, Noriyuki TAOKA, Seiichi MIYAZAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Study on Electron Emission from Phosphorus δ-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures},
year={2022},
volume={E105-C},
number={10},
pages={610-615},
abstract={We have fabricated two-tiered heterostructures consisting of phosphorus δ-doped Si quantum dots (Si-QDs) and undoped Si-QDs and studied their electron field emission properties. Electron emission was observed from the P-doped Si-QDs stack formed on the undoped Si-QDs stack by applying a forward bias of ∼6 V, which was lower than that for pure Si-QDs stack. This result is attributed to electric field concentration on the upper P-doped Si-QD layers beneath the layers of the undoped Si-QDs stack due to the introduction of phosphorus atom into the Si-QDs, which was positively charged due to the ionized P donor. The results lead to the development of planar-type electron emission devices with a low-voltage operation.},
keywords={},
doi={10.1587/transele.2021FUP0006},
ISSN={1745-1353},
month={October},}
Copy
TY - JOUR
TI - Study on Electron Emission from Phosphorus δ-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures
T2 - IEICE TRANSACTIONS on Electronics
SP - 610
EP - 615
AU - Katsunori MAKIHARA
AU - Tatsuya TAKEMOTO
AU - Shuji OBAYASHI
AU - Akio OHTA
AU - Noriyuki TAOKA
AU - Seiichi MIYAZAKI
PY - 2022
DO - 10.1587/transele.2021FUP0006
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E105-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2022
AB - We have fabricated two-tiered heterostructures consisting of phosphorus δ-doped Si quantum dots (Si-QDs) and undoped Si-QDs and studied their electron field emission properties. Electron emission was observed from the P-doped Si-QDs stack formed on the undoped Si-QDs stack by applying a forward bias of ∼6 V, which was lower than that for pure Si-QDs stack. This result is attributed to electric field concentration on the upper P-doped Si-QD layers beneath the layers of the undoped Si-QDs stack due to the introduction of phosphorus atom into the Si-QDs, which was positively charged due to the ionized P donor. The results lead to the development of planar-type electron emission devices with a low-voltage operation.
ER -
English
