We have fabricated two-tiered heterostructures consisting of phosphorus δ-doped Si quantum dots (Si-QDs) and undoped Si-QDs and studied their electron field emission properties. Electron emission was observed from the P-doped Si-QDs stack formed on the undoped Si-QDs stack by applying a forward bias of ∼6 V, which was lower than that for pure Si-QDs stack. This result is attributed to electric field concentration on the upper P-doped Si-QD layers beneath the layers of the undoped Si-QDs stack due to the introduction of phosphorus atom into the Si-QDs, which was positively charged due to the ionized P donor. The results lead to the development of planar-type electron emission devices with a low-voltage operation.

We fabricated highly dense Si nano-columnar structures accompanied with Si nanocrystals on W-coated quartz and characterized their local electrical transport in the thickness direction in a non-contact mode by using a Rh-coated Si cantilever with pulse bias application, in which Vmax, Vmin, and the duty ratio were set at +3.0V, -14V, and 50%, respectively. By applying a pulse bias to the bottom W electrode with respect to a grounded top electrode made of ∼10-nm-thick Au on a sample surface, non-uniform current images in correlation with surface morphologies reflecting electron emission were obtained. The change in the surface potential of the highly dense Si nano-columnar structures accompanied with Si nanocrystals, which were measured at room temperature by using an AFM/Kelvin probe technique, indicated electron injection into and extraction from Si nanocrystals, depending on the tip bias polarity. This result is attributable to efficient electron emission under pulsed bias application due to electron charging from the top electrode to the Si nanocrystals in a positively biased duration at the bottom electrode and subsequent quasi-ballistic transport through Si nanocrystals in a negatively biased duration.

We have fabricated highly-dense Si nano-columnar structures accompanied with Si nanocrystals on W-coated quartz, and characterized their local electrical transport in the thickness direction using atomic force microscopy (AFM) with a conductive cantilever. By applying DC negative bias to the bottom W electrode with respect to a grounded top electrode made of 10-nm-thick Au on the sample surface, current images reflecting highly-localized conduction were obtained in both contact and non-contact modes. This result is attributable to electron emission due to quasi-ballistic transport through Si nanocrystals via nanocolumnar structure.

Carbon nanofibers (CNFs) were fabricated on graphite plates using "Ar+ ion sputtering method" in large amount at room temperature. The morphology of CNFs was controlled by a simultaneous carbon supply during ion sputtering. CNF-tipped cones were formed on graphite plate surfaces without carbon supply whereas those with a simultaneous carbon supply featured mainly needle-like protrusions of large size. The field electron emission (FE) properties, measured using parallel plate configurations in 10-4 Pa range, showed the threshold fields of 4.4 and 5.2 V/µm with a current density of 1 µA/cm2 for CNF-tipped cones and needle-like protrusion, respectively. Reliability test results indicated that CNF-tipped cones were more stable than needle-like protrusion. The morphological change after reliability test showed a so-called "self-regenerative" process and structure damage for CNF-tipped cones and needle-like protrusions, respectively.

The properties of the surface-conduction electron-emitter display (SED) are mainly decided by the surface-conduction electron emitters (SCE), which are normally made from the expensive metal Pd. In this study, we propose to use metal Zn instead of Pd as the emitter material. Both the device electrode and ZnO thin film are deposited by a sputter, and the electron emitters (SCE) are formed by the electro-forming process. The electron emission characteristic is obtained and the luminescence is observed.

Electron emission from PVDF (polyvinylidene-fluoride) ferroelectric substance (thickness: 40 µm) by polarization inversion was realized experimentally with using about 1nm thick C-Au-S semiconductive layer on the surface of a tooth-type electrode. After polarization of the PVDF, a negative impulse voltage (-2400 V with 1-10 ns of wave front and 10-100 ms of wave tail) with a voltage higher than a coercive voltage was applied to the flat-type electrode on the reverse side of the PVDF surface in a vacuum. Then the emitted electrons were detected with using a probe in front of the tooth-type electrode. The detected charge was 6.110-12C.

Electron emissions from single-crystalline diamond surfaces by internally exciting electrons from the valence to conduction bands have been investigated. Monte Carlo simulations have been employed to estimate the impact ionization rates of carriers in diamond under high electric fields up to 1107V/cm. The calculations demonstrate substantial impact ionization rates which rapidly increase with increasing electric fields above 8105V/cm. Highly efficient electron emissions with high emission current efficiencies of approximate unity have been attained from a MIS-type diamond layered structure that are composed of heavily ion-implanted buried layer (M), undoped diamond (I) and hydrogenated p-type diamond (S) with an emission surface of a negative electron affinity. The highly efficient emission mechanism is discussed in relation to the field excitation of electrons from the valence band to the conduction band in the undoped diamond layer and the carrier transport to the diamond surface.

Electron field emission from polycrystalline diamond films has been investigated. Electron emission was measured locally at randomly chosen point on a diamond film fabricated by a microwave plasma chemical deposition method. In the original film, there were some points with a large emission current where flaws were found after the measurements, some points with a small and stable emission current without any flaw, and the other points with no emission. At the point of no emission, the film was electrically broken down by applying a high voltage. After the intentional breaking down, a small and stable emission always appeared there with no flaw. The maximum emission current extracted from an emission site was usually 1µA with no structural flaw found after the measurements. By using a simple model of emission site consisting of a core conductor embedded in insulator, the limitation of emission current is estimated from heating by the current and heat transfer to the insulator.

Reactive sputtering of a metallic target in DC planar magnetron discharge shows a drastic mode transition between metallic and oxide modes. To describe the experimental results quantitatively, a new reactive sputtering model including the secondary electron emission coefficient of a target has been developed. The model is based on a simple reactive gas balance model proposed by Berg et al., and can quantitatively describe experimental results such as the oxygen flow rate dependence of deposition rate and discharge, observed for MgO sputter-deposition.

The relationships between lattice orientation of the electron-beam evaporated MgO layer used as protecting layer for ac plasma displays (ac-PDPs) and the discharge characteristics of color ac-PDPs were investigated by the measurements of ion-induced secondary electron emission. It is proved that values of γi for MgO are large in the order of (220) orientation, (200) orientation, and (111) orientation, that is, γi(220) > γi(200) > γi(111). The values of φ for different lattice orientation are obtained by the measurements of thermionic emission and photo emission. The aging measurements for testing panels with the different lattice orientation of MgO layer revealed that performance of those panels are excellent in the order of (220), (200), and (111). In particular, luminance and luminous efficiency become larger in the order of (220), (200), and (111). It is pointed out that the degree of longevity, sustaining voltage, and memory margin for ac-PDPs with protecting materials as MgO are estimated by the measurements of γi.