AFM/STM observations were performed on sub nm thick C-Au-S film by co-operation process of plasma CVD and sputtering with using CH4, SF6 and Ar mixture gas and Au plate discharge electrode. From the refractive index values, the conductive granular molecules with a size of 0.4-0.6 nm were expected to exist in the film. For the film at thickness similar to the molecular size, Ra (arithmetic mean departures of roughness profile from the mean line) values were measured to be 0.712/6.10 nm by AFM/STM measurement, respectively. The one order large STM Ra value compared to the AFM Ra value suggests that the film contains conductive granular molecules.

Carbon-gold (C-Au) film was formed by co-operation process of plasma CVD and sputtering with using methane and Ar mixture gas and gold plate discharge electrode. Refractive index of 3.1 for the film was obtained at Au atom content of 5.5 atomic%. The optical transmittance was improved significantly in the visible light wavelength range compared to the C-S-Au film reported previously. Au atom distribution in the C-Au film and the electronic polarizabilities were discussed in the relation to the refractive index.

The propagation characteristic of 670 nm laser light on the array of 10 µm diameter polystyrene micro-sphere was studied. For the linearly arranged array of micro-spheres from one to 12, the propagated light intensity was decreased from 700 mV to 45 mV. However, the propagated light intensity in the air was significantly decreased and it became 2 mV at 60 µm from the optical fiber light source. For the micro-sphere array on the curvilinear line, the light intensity at 12th micro-sphere became 35 mV. This fact means the light was propagated almost same as that on the linear line. Whereas it is expected that three dimensionally crossing optical wave-guide is possible to be fabricated by arranging the micro-spheres.

Electron emission from PVDF (polyvinylidene-fluoride) ferroelectric substance (thickness: 40 µm) by polarization inversion was realized experimentally with using about 1nm thick C-Au-S semiconductive layer on the surface of a tooth-type electrode. After polarization of the PVDF, a negative impulse voltage (-2400 V with 1-10 ns of wave front and 10-100 ms of wave tail) with a voltage higher than a coercive voltage was applied to the flat-type electrode on the reverse side of the PVDF surface in a vacuum. Then the emitted electrons were detected with using a probe in front of the tooth-type electrode. The detected charge was 6.110-12C.

Thin films of carbon (C)-sulfur (S) compound were formed by plasma CVD (PCVD) at the special chemical condition. The reactor has a parallel plate electrode system and was operated at a discharge frequency of 13.56 MHz with using a mixture gas of argon (Ar), methane (CH4) and SF6. The deposition was performed on a substrate placed on the grounded electrode. Atomic composition of the film was observed to depend on the gas mixture ratio. The sulfur atom density was increased up to 30% with using a mixture gas at a pressure of 0.1 Torr and at a flow rate of 20, 20 and 50 SCCM for Ar, CH4 and SF6, respectively. It was expected that the C-S compounds were deposited under the condition of F atom elimination by forming HF.