This paper presents a new low-dropout (LDO) regulator with low-quiescent, high-drive and fast-transient performance. This is based on a new composite power transistor composed of a shunt feedback class-AB embedded gain stage and the application of dynamic-biasing schemes to both the error amplifier as well as the composite power transistor. The proposed LDO regulator has been simulated and validated using BSIM3 models and GLOBALFOUNDRIES 0.18-µm CMOS process. The simulation results have shown that the LDO regulator consumes 4.7 µA quiescent current at no load, regulating the output at 1 V from a minimum 1.2 V supply. It is able to deliver up to 450 mA load current with a dropout of 200 mV. It can be stabilized using a 4.7 µF output capacitor with a 0.1 Ω ESR resistor. The maximum transient output voltage is 64.6 mV on the basis of a load step change of 450 mA/10 ns under typical condition. The full load transient response is less than 350 ns.

This paper presents analysis and design of a new ultra-low voltage analog front end (AFE) dedicated to strain sensor applications. The AFE, designed in 0.18 µm CMOS process, features a chopper-stabilized instrumentation amplifier (IA), a balanced active MOSFET-C 2nd order low pass filter (LPF), a clock generator and a voltage booster which operate at supply voltage (Vdd) of 0.6 V. The designed IA achieves 30 dB of closed-loop gain, 101 dB of common-mode rejection ratio (CMRR) at 50 Hz, 80 dB of power-supply rejection ratio (PSRR) at 50 Hz, thermal noise floor of 53.4 nV/, current consumption of 14 µA, and noise efficiency factor (NEF) of 9.7. The high CMRR and rail-to-rail output swing capability is attributed to a new low voltage realization of the active-bootstrapped technique using a pseudo-differential gain-boosting operational transconductance amplifier (OTA) and proposed current-driven bulk (CDB) biasing technique. An output capacitor-less low-dropout regulator (LDO), with a new fast start-up LPF technique, is used to regulate this 0.6 V supply from a 0.8–1.0 V energy harvesting power source. It achieves power supply rejection (PSR) of 42 dB at frequency of 1 MHz. A cascode compensated pseudo differential amplifier is used as the filter's building block for low power design. The filter's single-ended-to-balanced converter is implemented using a new low voltage amplifier with two-stage common-mode cancellation. The overall AFE was simulated to have 65.6 dB of signal-to-noise ratio (SNR), total harmonic distortion (THD) of less than 0.9% for a 100 Hz sinusoidal maximum input signal, bandwidth of 2 kHz, and power consumption of 51.2 µW. Spectre RF simulations were performed to validate the design using BSIM3V3 transistor models provided by GLOBALFOUNDRIES 0.18 µm CMOS process.

In this paper, we present a new composite transistor circuit design technique that provides superior performance enhancement to analog circuits. By adding a composite transistor to the cascode-compensated amplifier, it has achieved a 102 dB DC gain, and a 37.6 MHz unity gain bandwidth while driving a 2 nF heavy capacitive load at a single 1.8 V supply. In the comparison of power-bandwidth and power-speed efficiencies on figures of merit, it offers significantly high values with respect to the reported state-of-the-art works. By employing the composite transistor in a linear regulator powered by a 3.3 V supply to generate a 1.8 V output voltage, it has shown fast recovery response at various load current transients, having a 1% settling time of 0.1 µS for a 50 mA or 100 mA step, while a 1% settling time of 0.36 µS for a maximum 735 mA step under a capacitive load of 10 µF with a 1 Ω ESR resistor. The simulated load regulation is 0.035% and line regulation is 0.488%. Comparing its results with other state-of-art LDO reported results, it also validates the significant enhanced performance of the proposed composite-transistor-based design in terms of speed, current driving capability and stability against changes in environmental parameters. All the proposed designs are simulated using chartered semiconductor (CSM) 1.8 V/3.3 V 0.18 µm CMOS triple-well process technology with thin/thick oxide options and BSIM3 model parameters.

A 150 MS/s 10-bit MOS-inverter-based subranging analog-to-digital converter (ADC) dedicated to a high-speed low-power application is presented in this paper. A new time constant reduction technique is proposed in the multi-stage preamplifier design which aims to further increase the speed of the coarse ADC. A synchronized switch is introduced to minimize the sample-time mismatch in the interleaved architecture of fine ADCs. An internal pipelined scheme incorporating the double sampling and interleaving techniques in fine ADCs allows the ADC sample input signal to run on a consecutive clock, thus maximizing the throughput. The prototype ADC achieves 52 dB SNDR for a 10 MHz input frequency at 150 MS/s. Without calibration, the measured differential nonlinearity (DNL) is 0.5 LSB, while the integral nonlinearity (INL) is 0.9 LSB. The CMOS ADC is fabricated in a 0.35 µm CMOS technology, with an active area of 2.7 mm2, consuming only 178 mW from a single 3 V supply. Comparing technology normalized figure-of-merits, it achieves better power-speed efficiency than other similar types of ADCs.