Vehicles on the road are expected to connect continuously to the Internet at sufficiently high speeds, e.g., several Mbps or higher, to support multimedia applications. However, even when passing through a well-facilitated city area, Internet access can be unreliable and even disconnected if the travel speed is high. We therefore propose a network path selection technique to meet network throughput requirements. The proposed technique is based on the attractor selection model and enables vehicles to switch the path from a route connecting directly to a cellular network to a relay type through neighboring vehicles for Internet access. We also develop a mechanism that prevents frequent path switching when the performance of all available paths does not meet the requirements. We conduct field evaluations by platooning two vehicles in a real-world driving environment and confirm that the proposed technique maintains the required throughput of up to 7Mbps on average. We also evaluated our proposed technique by extensive computer simulations of up to 6 vehicles in a platoon. The results show that increasing platoon length yields a greater improvement in throughput, and the mechanism we developed decreases the rate of path switching by up to 25%.

The feasibility of a new transistor structure was demonstrated through an experimental observation of current gain and voltage gain. The proposed transistor structure is a hot electron transistor without a base layer to minimize scattering. Electron emission from the emitter is controlled using positively biased Schottky gate electrodes located on both sides of the emitter mesa. Monte Carlo simulation shows an estimated delay time of 0.17 ps and low gate leakage current with open-circuit voltage gain over unity. To confirm the basic operation, the device with a 25 nm wide emitter was fabricated. To obtain saturated current-voltage characteristics, the emitter was surrounded by gates and parasitic regions were eliminated by electron beam lithography. The observed open-circuit voltage gain was 25. To obtain a low leakage current, an electron energy smaller than the Γ-L separation was necessary to maintain the ballistic nature of the electron. When the gate-emitter voltage was 0.8 V, the gate leakage current was only 4% of the collector current. Thus voltage amplication and current amplification were confirmed simultaneously.