IEICE TRANSACTIONS on Electronics
Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer
Summary :
The feasibility of a new transistor structure was demonstrated through an experimental observation of current gain and voltage gain. The proposed transistor structure is a hot electron transistor without a base layer to minimize scattering. Electron emission from the emitter is controlled using positively biased Schottky gate electrodes located on both sides of the emitter mesa. Monte Carlo simulation shows an estimated delay time of 0.17 ps and low gate leakage current with open-circuit voltage gain over unity. To confirm the basic operation, the device with a 25 nm wide emitter was fabricated. To obtain saturated current-voltage characteristics, the emitter was surrounded by gates and parasitic regions were eliminated by electron beam lithography. The observed open-circuit voltage gain was 25. To obtain a low leakage current, an electron energy smaller than the Γ-L separation was necessary to maintain the ballistic nature of the electron. When the gate-emitter voltage was 0.8 V, the gate leakage current was only 4% of the collector current. Thus voltage amplication and current amplification were confirmed simultaneously.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E89-C No.7 pp.972-978
- Publication Date
- 2006/07/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e89-c.7.972
- Type of Manuscript
- Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
- Category
- THz Devices
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Yasuyuki MIYAMOTO, Ryo NAKAGAWA, Issei KASHIMA, Masashi ISHIDA, Nobuya MACHIDA, Kazuhito FURUYA, "Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer" in IEICE TRANSACTIONS on Electronics,
vol. E89-C, no. 7, pp. 972-978, July 2006, doi: 10.1093/ietele/e89-c.7.972.
Abstract: The feasibility of a new transistor structure was demonstrated through an experimental observation of current gain and voltage gain. The proposed transistor structure is a hot electron transistor without a base layer to minimize scattering. Electron emission from the emitter is controlled using positively biased Schottky gate electrodes located on both sides of the emitter mesa. Monte Carlo simulation shows an estimated delay time of 0.17 ps and low gate leakage current with open-circuit voltage gain over unity. To confirm the basic operation, the device with a 25 nm wide emitter was fabricated. To obtain saturated current-voltage characteristics, the emitter was surrounded by gates and parasitic regions were eliminated by electron beam lithography. The observed open-circuit voltage gain was 25. To obtain a low leakage current, an electron energy smaller than the Γ-L separation was necessary to maintain the ballistic nature of the electron. When the gate-emitter voltage was 0.8 V, the gate leakage current was only 4% of the collector current. Thus voltage amplication and current amplification were confirmed simultaneously.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.7.972/_p
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@ARTICLE{e89-c_7_972,
author={Yasuyuki MIYAMOTO, Ryo NAKAGAWA, Issei KASHIMA, Masashi ISHIDA, Nobuya MACHIDA, Kazuhito FURUYA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer},
year={2006},
volume={E89-C},
number={7},
pages={972-978},
abstract={The feasibility of a new transistor structure was demonstrated through an experimental observation of current gain and voltage gain. The proposed transistor structure is a hot electron transistor without a base layer to minimize scattering. Electron emission from the emitter is controlled using positively biased Schottky gate electrodes located on both sides of the emitter mesa. Monte Carlo simulation shows an estimated delay time of 0.17 ps and low gate leakage current with open-circuit voltage gain over unity. To confirm the basic operation, the device with a 25 nm wide emitter was fabricated. To obtain saturated current-voltage characteristics, the emitter was surrounded by gates and parasitic regions were eliminated by electron beam lithography. The observed open-circuit voltage gain was 25. To obtain a low leakage current, an electron energy smaller than the Γ-L separation was necessary to maintain the ballistic nature of the electron. When the gate-emitter voltage was 0.8 V, the gate leakage current was only 4% of the collector current. Thus voltage amplication and current amplification were confirmed simultaneously. },
keywords={},
doi={10.1093/ietele/e89-c.7.972},
ISSN={1745-1353},
month={July},}
Copy
TY - JOUR
TI - Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer
T2 - IEICE TRANSACTIONS on Electronics
SP - 972
EP - 978
AU - Yasuyuki MIYAMOTO
AU - Ryo NAKAGAWA
AU - Issei KASHIMA
AU - Masashi ISHIDA
AU - Nobuya MACHIDA
AU - Kazuhito FURUYA
PY - 2006
DO - 10.1093/ietele/e89-c.7.972
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2006
AB - The feasibility of a new transistor structure was demonstrated through an experimental observation of current gain and voltage gain. The proposed transistor structure is a hot electron transistor without a base layer to minimize scattering. Electron emission from the emitter is controlled using positively biased Schottky gate electrodes located on both sides of the emitter mesa. Monte Carlo simulation shows an estimated delay time of 0.17 ps and low gate leakage current with open-circuit voltage gain over unity. To confirm the basic operation, the device with a 25 nm wide emitter was fabricated. To obtain saturated current-voltage characteristics, the emitter was surrounded by gates and parasitic regions were eliminated by electron beam lithography. The observed open-circuit voltage gain was 25. To obtain a low leakage current, an electron energy smaller than the Γ-L separation was necessary to maintain the ballistic nature of the electron. When the gate-emitter voltage was 0.8 V, the gate leakage current was only 4% of the collector current. Thus voltage amplication and current amplification were confirmed simultaneously.
ER -
English
