1-1hit |
Sang Hyuk PARK Sangwoo KANG Seongjae CHO Dong-Seup LEE Jung Han LEE Hong-Seon YANG Kwon-Chil KANG Joung-Eob LEE Jong Duk LEE Byung-Gook PARK
A Recessed-Channel Dual-Gate Single Electron Transistor (RCDG-SET) which has the possibility of room temperature operation is proposed. Side gates of a RCDG-SET form electrical tunneling barriers around a recessed channel, which is newly introduced. Not only gate but also a recessed channel is self aligned to source and drain. Characteristics of a RCDG-SET are compared with those of previous DG-SETs through device simulation (SILVACO). Due to a recessed channel and a self aligned structure, MOSFET current which causes low Peak-to-Valley Current Ratio (PVCR) is suppressed. This property of a RCDG-SET is expected to contribute for room temperature operation.