Lasing action in GaInAs/GaInAsP quantum-wire structure, fabricated by two-step OMVPE growth, electron beam lithography, and wet chemical etching techniques, was obtained for the first time at 77 K with pulsed current injection. GaInAs quantum-wires with size of 10 nm thick and about 30 nm wide were completely separated and embedded in GaInAsP optical confinement layers so as to form a separate-confinement-heterostructure quantum-wire (SCH-QW) laser. The evidence of quantum-wire levels was confirmed by comparing its emission spectrum with that of quantum-film (QF) structure both experimentally and theoretically. The results indicate that there is no serious defects or damages in the laser operation of quantum-wires fabricated by the combination of electron beam lithography, wet chemical etching, and regrowth techniques.