IEICE TRANSACTIONS on transactions
Lasing Action in GaInAs/GaInAsP Quantum-Wire Structure
Summary :
Lasing action in GaInAs/GaInAsP quantum-wire structure, fabricated by two-step OMVPE growth, electron beam lithography, and wet chemical etching techniques, was obtained for the first time at 77 K with pulsed current injection. GaInAs quantum-wires with size of 10 nm thick and about 30 nm wide were completely separated and embedded in GaInAsP optical confinement layers so as to form a separate-confinement-heterostructure quantum-wire (SCH-QW) laser. The evidence of quantum-wire levels was confirmed by comparing its emission spectrum with that of quantum-film (QF) structure both experimentally and theoretically. The results indicate that there is no serious defects or damages in the laser operation of quantum-wires fabricated by the combination of electron beam lithography, wet chemical etching, and regrowth techniques.
- Publication
- IEICE TRANSACTIONS on transactions Vol.E73-E No.1 pp.63-70
- Publication Date
- 1990/01/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on International Conference on Integrated Optics and Optical Fiber Communication)
- Category
- Optical Semiconductor Devices and OEICs
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Ming CAO, Yasunari MIYAKE, Shigeo TAMURA, Hideki HIRAYAMA, Shigehisa ARAI, Yasuharu SUEMATSU, Yasuyuki MIYAMOTO, "Lasing Action in GaInAs/GaInAsP Quantum-Wire Structure" in IEICE TRANSACTIONS on transactions,
vol. E73-E, no. 1, pp. 63-70, January 1990, doi: .
Abstract: Lasing action in GaInAs/GaInAsP quantum-wire structure, fabricated by two-step OMVPE growth, electron beam lithography, and wet chemical etching techniques, was obtained for the first time at 77 K with pulsed current injection. GaInAs quantum-wires with size of 10 nm thick and about 30 nm wide were completely separated and embedded in GaInAsP optical confinement layers so as to form a separate-confinement-heterostructure quantum-wire (SCH-QW) laser. The evidence of quantum-wire levels was confirmed by comparing its emission spectrum with that of quantum-film (QF) structure both experimentally and theoretically. The results indicate that there is no serious defects or damages in the laser operation of quantum-wires fabricated by the combination of electron beam lithography, wet chemical etching, and regrowth techniques.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e73-e_1_63/_p
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@ARTICLE{e73-e_1_63,
author={Ming CAO, Yasunari MIYAKE, Shigeo TAMURA, Hideki HIRAYAMA, Shigehisa ARAI, Yasuharu SUEMATSU, Yasuyuki MIYAMOTO, },
journal={IEICE TRANSACTIONS on transactions},
title={Lasing Action in GaInAs/GaInAsP Quantum-Wire Structure},
year={1990},
volume={E73-E},
number={1},
pages={63-70},
abstract={Lasing action in GaInAs/GaInAsP quantum-wire structure, fabricated by two-step OMVPE growth, electron beam lithography, and wet chemical etching techniques, was obtained for the first time at 77 K with pulsed current injection. GaInAs quantum-wires with size of 10 nm thick and about 30 nm wide were completely separated and embedded in GaInAsP optical confinement layers so as to form a separate-confinement-heterostructure quantum-wire (SCH-QW) laser. The evidence of quantum-wire levels was confirmed by comparing its emission spectrum with that of quantum-film (QF) structure both experimentally and theoretically. The results indicate that there is no serious defects or damages in the laser operation of quantum-wires fabricated by the combination of electron beam lithography, wet chemical etching, and regrowth techniques.},
keywords={},
doi={},
ISSN={},
month={January},}
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TY - JOUR
TI - Lasing Action in GaInAs/GaInAsP Quantum-Wire Structure
T2 - IEICE TRANSACTIONS on transactions
SP - 63
EP - 70
AU - Ming CAO
AU - Yasunari MIYAKE
AU - Shigeo TAMURA
AU - Hideki HIRAYAMA
AU - Shigehisa ARAI
AU - Yasuharu SUEMATSU
AU - Yasuyuki MIYAMOTO
PY - 1990
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E73-E
IS - 1
JA - IEICE TRANSACTIONS on transactions
Y1 - January 1990
AB - Lasing action in GaInAs/GaInAsP quantum-wire structure, fabricated by two-step OMVPE growth, electron beam lithography, and wet chemical etching techniques, was obtained for the first time at 77 K with pulsed current injection. GaInAs quantum-wires with size of 10 nm thick and about 30 nm wide were completely separated and embedded in GaInAsP optical confinement layers so as to form a separate-confinement-heterostructure quantum-wire (SCH-QW) laser. The evidence of quantum-wire levels was confirmed by comparing its emission spectrum with that of quantum-film (QF) structure both experimentally and theoretically. The results indicate that there is no serious defects or damages in the laser operation of quantum-wires fabricated by the combination of electron beam lithography, wet chemical etching, and regrowth techniques.
ER -
English
