We propose the collective electron tunneling model in the electron injection process between the Nano Dots (NDs) and the two-dimensional electron gas (2DEG). We report the collective motion of electrons between the 2DEG and the NDs based on the measurement of the Si-ND floating gate structure in the previous studies. However, the origin of this collective motion has not been revealed yet. We evaluate the proposed tunneling model by the model calculation. We reveal that our proposed model reproduces the collective motion of electrons. The insight obtained by our model shows new viewpoints for designing future nano-electronic devices.

We have revealed that the electronic states in the electrodes give a significant influence to the electron transport in nano-electronic devices. We have theoretically investigated the time-evolution of electron transport from a two-dimensional electron gas (2DEG) to a quantum dot (QD), where 2DEG represents the electrode in the nano-electronic devices. We clearly showed that the coherent electron transport is remarkably modified depending on the initial electronic state in the 2DEG. The electron transport from the 2DEG to the QD is strongly enhanced, when the initial state of the electron in the 2DEG is localized below the QD. We have proposed that controlling the electronic state in the electrodes could realize a new concept device function without modifying the electrode structures; that achieves a new controllable state in future nano-electronic devices.