Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
Summary :
We propose the collective electron tunneling model in the electron injection process between the Nano Dots (NDs) and the two-dimensional electron gas (2DEG). We report the collective motion of electrons between the 2DEG and the NDs based on the measurement of the Si-ND floating gate structure in the previous studies. However, the origin of this collective motion has not been revealed yet. We evaluate the proposed tunneling model by the model calculation. We reveal that our proposed model reproduces the collective motion of electrons. The insight obtained by our model shows new viewpoints for designing future nano-electronic devices.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E94-C No.5 pp.730-736
- Publication Date
- 2011/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E94.C.730
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
Authors
Masakazu MURAGUCHI
Yoko SAKURAI
Yukihiro TAKADA
Shintaro NOMURA
Kenji SHIRAISHI
Mitsuhisa IKEDA
Katsunori MAKIHARA
Seiichi MIYAZAKI
Yasuteru SHIGETA
Tetsuo ENDOH
Keyword
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Masakazu MURAGUCHI, Yoko SAKURAI, Yukihiro TAKADA, Shintaro NOMURA, Kenji SHIRAISHI, Mitsuhisa IKEDA, Katsunori MAKIHARA, Seiichi MIYAZAKI, Yasuteru SHIGETA, Tetsuo ENDOH, "Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 5, pp. 730-736, May 2011, doi: 10.1587/transele.E94.C.730.
Abstract: We propose the collective electron tunneling model in the electron injection process between the Nano Dots (NDs) and the two-dimensional electron gas (2DEG). We report the collective motion of electrons between the 2DEG and the NDs based on the measurement of the Si-ND floating gate structure in the previous studies. However, the origin of this collective motion has not been revealed yet. We evaluate the proposed tunneling model by the model calculation. We reveal that our proposed model reproduces the collective motion of electrons. The insight obtained by our model shows new viewpoints for designing future nano-electronic devices.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.730/_p
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@ARTICLE{e94-c_5_730,
author={Masakazu MURAGUCHI, Yoko SAKURAI, Yukihiro TAKADA, Shintaro NOMURA, Kenji SHIRAISHI, Mitsuhisa IKEDA, Katsunori MAKIHARA, Seiichi MIYAZAKI, Yasuteru SHIGETA, Tetsuo ENDOH, },
journal={IEICE TRANSACTIONS on Electronics},
title={Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor},
year={2011},
volume={E94-C},
number={5},
pages={730-736},
abstract={We propose the collective electron tunneling model in the electron injection process between the Nano Dots (NDs) and the two-dimensional electron gas (2DEG). We report the collective motion of electrons between the 2DEG and the NDs based on the measurement of the Si-ND floating gate structure in the previous studies. However, the origin of this collective motion has not been revealed yet. We evaluate the proposed tunneling model by the model calculation. We reveal that our proposed model reproduces the collective motion of electrons. The insight obtained by our model shows new viewpoints for designing future nano-electronic devices.},
keywords={},
doi={10.1587/transele.E94.C.730},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
T2 - IEICE TRANSACTIONS on Electronics
SP - 730
EP - 736
AU - Masakazu MURAGUCHI
AU - Yoko SAKURAI
AU - Yukihiro TAKADA
AU - Shintaro NOMURA
AU - Kenji SHIRAISHI
AU - Mitsuhisa IKEDA
AU - Katsunori MAKIHARA
AU - Seiichi MIYAZAKI
AU - Yasuteru SHIGETA
AU - Tetsuo ENDOH
PY - 2011
DO - 10.1587/transele.E94.C.730
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2011
AB - We propose the collective electron tunneling model in the electron injection process between the Nano Dots (NDs) and the two-dimensional electron gas (2DEG). We report the collective motion of electrons between the 2DEG and the NDs based on the measurement of the Si-ND floating gate structure in the previous studies. However, the origin of this collective motion has not been revealed yet. We evaluate the proposed tunneling model by the model calculation. We reveal that our proposed model reproduces the collective motion of electrons. The insight obtained by our model shows new viewpoints for designing future nano-electronic devices.
ER -
English
