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[Author] Tatsuo NAKAJIMA(3hit)

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  • Highly Reliable Embedded Software Development Using Advanced Software Technologies

    Takuya KATAYAMA  Tatsuo NAKAJIMA  Taiichi YUASA  Tomoji KISHI  Shin NAKAJIMA  Shuichi OIKAWA  Masahiro YASUGI  Toshiaki AOKI  Mitsutaka OKAZAKI  Seiji UMATANI  

     
    INVITED PAPER

      Vol:
    E88-D No:6
      Page(s):
    1105-1116

    We have launched "Highly-Reliable Embedded Software Development" Project, held as a part of e-Society Project, supported by Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. The aim of this project is to enable the industry to produce highly reliable and advanced software by introducing latest software technologies into embedded software development. In this paper, we introduce the overview of the projects and our activities and results so far.

  • Robust Lightweight Embedded Virtualization Layer Design with Simple Hardware Assistance

    Tsung-Han LIN  Yuki KINEBUCHI  Tatsuo NAKAJIMA  

     
    PAPER-Computer System and Services

      Vol:
    E95-D No:12
      Page(s):
    2821-2832

    In this paper, we propose a virtualization architecture for a multi-core embedded system to provide more system reliability and security while maintaining performance and without introducing additional special hardware supports or implementing a complex protection mechanism in the virtualization layer. Embedded systems, especially consumer electronics, have often used virtualization. Virtualization is not a new technique, as there are various uses for both GPOS (General Purpose Operating System) and RTOS (Real Time Operating System). The surge of the multi-core platforms in embedded systems also helps consolidate the virtualization system for better performance and lower power consumption. Embedded virtualization design usually uses two approaches. The first is to use the traditional VMM, but it is too complicated for use in the embedded environment without additional special hardware support. The other approach uses the microkernel, which imposes a modular design. The guest systems, however, would suffer from considerable modifications in this approach, as the microkernel allows guest systems to run in the user space. For some RTOSes and their applications originally running in the kernel space, this second approach is more difficult to use because those codes use many privileged instructions. To achieve better reliability and keep the virtualization layer design lightweight, this work uses a common hardware component adopted in multi-core embedded processors. In most embedded platforms, vendors provide additional on-chip local memory for each physical core, and these local memory areas are only private to their cores. By taking advantage of this memory architecture, we can mitigate the above-mentioned problems at once. We choose to re-map the virtualization layer's program on the local memory, called SPUMONE, which runs all guest systems in the kernel space. Doing so, it can provide additional reliability and security for the entire system because the SPUMONE design in a multi-core platform has each instance installed on a separate processor core. This design differs from traditional virtualization layer design, and the content of each SPUMONE is inaccessible to the others. We also achieve this goal without adding overhead to the overall performance.

  • Evaluation of Fixed Charge and Interface Trap Densities in SIMOX Wafers and Their Effects on Device Characteristics

    Shoichi MASUI  Tatsuo NAKAJIMA  Keisuke KAWAMURA  Takayuki YANO  Isao HAMAGUCHI  Masaharu TACHIMORI  

     
    PAPER-Integrated Electronics

      Vol:
    E78-C No:9
      Page(s):
    1263-1272

    The buried oxide nonintegrities, represented as the equivalent fixed oxide charge and interface trap densities at both the upper and lower interface of buried oxide, are evaluated for low-dose and high-dose SIMOX wafers, and their effects on device characteristics are investigated. The equivalent fixied oxide charge and trap densities at the lower interface, which are measured with buried oxide capacitors, are negligibly small in as-fabricated SIMOX wafers. This result enables us to make an analytical model of the parasitic drain/source-to-substrate capacitance in an SOI MOSFET, in which the effect of the depletion layer under the buried oxide is considered. The influence of thinner buried oxide and process-induced fixed oxide charge on the parasitic capacitance is explored with this model. The equivalent fixed oxide charge and trap densities at the upper interface are evaluated by the threshold voltage measurement in an SOI NMOSFET. The principle of this evaluation as well as the experimental technique are described in detail. The oxide charge and trap densities at the upper interface are higher than those at the lower interface for both SIMOX wafers. With a new model of the subthreshold slope based on a two-dimensional potential analysis the influence of the trap at the upper interface is discussed.