Compact intra-cavity spectroscopic measurements may be obtained with any material that has an absorption signature under the gain bandwidth of a fiber laser. Experiments have demonstrated that compared with a regular absorption scheme, an increase in sensitivity is achieved when using the intra-cavity configuration. The practical limit for this enhancement is given by the fiber laser noise. Since intra-cavity spectroscopy is essentially a single beam technique, the application of dual-beam noise reduction techniques is not possible. However, considering that a single-mode fiber can support two modes of polarization, we have used a polarization beam splitter to create two independent cavities (x and y polarization) with the same noise, one cavity of which contains the absorber. For the first time, this permits the convenient use of Balanced Ratiometric Detection in conjunction with an intra-cavity absorption arrangement.

A novel optical technique for the measurement of temperature is proposed. This is accomplished by depositing alternating 1/4 wave layers of silicon nitride and silicon-rich silicon nitride at the end of an optical fiber. These layers of alternating refractive index form the equivalent of a Bragg grating of a high temperature material. When the fiber and the Bragg grating are heated, the Bragg stack expands, and there is a change in the reflective peak wavelength of this wave stack. Thus, the wavelength of peak reflectivity is a function of temperature. Currently, the 15 nm spectral width of the Bragg stacks is achieved in our laboratory, which is conveniently monitored with a CCD solid state spectrometer and the temperature sensor probes can be also multiplexed at separated specific reflection wavelength. In the experiment, the temperatures in excess of 1,100 centigrade have been measured with a resolution of less than 3 centigrade degree.

A novel technique has been developed for in situ sensing of thin film growth. In this method, a fiber optic probe is placed at an appropriate position in a deposition chamber, and the thin film builds up on the end of the fiber. This film is either the same as on the wafer where deposition occurs, or it bears a fixed relationship to the film on the wafer. By an analysis of the intensity of the light reflected from the film and guided by the fiber, information on the film may be obtained. With interference causing maxima, minima and a point of inflection as the film grows, it is possible to obtain near real time information on the following quantities: the real and imaginary parts of the refractive index of the film, a Gaussian parameter characterizing surface roughness, and the film thickness itself. To demonstrate this technique, we have studied the deposition of silicon nitride films in a CVD reactor and how reactor temperature and reactant flow rates influence film growth. This technique may be applied to measure in situ reflectivity of multi layer films, so that reflectance as a function of temperature and time may be obtained. Because the measurement is simple and direct and the information is optical, we believe that this technique has the potential to supplant quartz oscillators in the measurement of thin film growth.