In this study, flexible organic solar cells (OSCs) employing a solution-processed hole-transporting layer (HTL) and low temperature annealing active layer have been fabricated. Vanadium oxide (V$_{2}$O$_{5})$, poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS), V$_{2}$O$_{5}$/PEDOT:PSS or PEDOT:PSS/V$_{2}$O$_{5}$ is used as the HTL. Poly(3-hexythiophene) (P3HT):[6,6]-phenyl C61-butyric acid methyl ester (PCBM) is used as the active layer. HTL and active layer are all formed by a spin coating method on polyethylene terephthalate (PET) substrates. The OSC configuration has been optimized in the study to be PET/ITO/V$_{2}$O$_{5}$/PEDOT:PSS/P3HT:PCBM/LiF/Al. Based on a low annealing temperature of 90$^{circ}$C for P3HT:PCBM and parameters optimization of solution-processed V$_{2}$O$_{5}$/PEDOT:PSS, the OSC demonstrates a current density (JSC) and power conversion efficiency (PCE) of 6.08, mA/cm$^{2}$ and 1.57%, while an OSC without the HTL has PCE around 0.06%. The V$_{2}$O$_{5}$/PEDOT:PSS stacked HTL provides not only a stepwise hole-transporting energy diagram configuration but a smooth film surface for coating P3HT:PCBM active layer, which subsequently increases charge carrier transporting capability and extracts holes from the active layer to the anode.

This CMOS transceiver IC exploits the superheterodyne architecture to implement a low-cost RF front-end with only 6.25 mm2 die area for IEEE 802.11b standard. The transceiver is implemented in 0.25 µm CMOS process with 2.7 V supply voltage, and achieves a -86 dBm 11 Mb/s receive sensitivity and a 2 dBm transmit output power.