This paper studies impact of well edge proximity effect on circuit delay, based on model parameters extracted from test structures in an industrial 65 nm wafer process. Experimental results show that up to 10% of delay increase arises by the well edge proximity effect in the 65 nm technology, and it depends on interconnect length. Furthermore, due to asymmetric increase in pMOS and nMOS threshold voltages, delay may decrease in spite of the threshold voltage increase. From these results, we conclude that considering WPE is indispensable to cell characterization in the 65 nm technology.

Capacitive and inductive crosstalk noises are expected to be more serious in advanced technologies. However, capacitive and inductive crosstalk noises in the future have not been concurrently and sufficiently discussed quantitatively, though capacitive crosstalk noise has been intensively studied solely as a primary factor of interconnect delay variation. This paper quantitatively predicts the impact of capacitive and inductive crosstalk in prospective processes, and reveals that interconnect scaling strategies strongly affect relative dominance between capacitive and inductive coupling. Our prediction also makes the point that the interconnect resistance significantly influences both inductive coupling noise and propagation delay. We then evaluate a tradeoff between wire cross-sectional area and worst-case propagation delay focusing on inductive coupling noise, and show that an appropriate selection of wire cross-section can reduce delay uncertainty at the small sacrifice of propagation delay.