Fabrication of all-epitaxial high-Tc SIS tunnel junctions requires an atomically flat superconducting thin film to be grown and a proper insulating material to be selected. First, we study the initial growth mode of YBCO thin films and show that reducing the growth rate results in a very smooth surface. Second, perovskite-related compound oxides, PrGaO3 and NdGaO3, which have a small lattice mismatch with YBCO and good wetability, are shown to be promising insulating materials for all-epitaxial SIS tunnel junctions. We believe that these concepts will be useful in the development of all-epitaxial high-Tc SIS tunnel junctions with good electrical properties.

BaSnO3 is proposed as a new insulating material with good surface coverage of the lower superconductor electrode for superconductor/insulator/superconductor (SIS) tunnel junctions made of high-Tc superconductor YBa2Cu3Ox (YBCO). This paper reports on investigation of the epitaxial nature of BaSnO3 on YBCO thin films and YBCO/BaSnO3 /YBCO trilayer formation that are grown in situ by reactive co-evaporation in oxygen radicals. Investigation was done by reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM), and X-ray diffraction (XRD). these observations confirm that (001)-oriented YBCO and (100)-oriented BaSnO3 thin films with atomically smooth surfaces grow epitaxially on each other. In addition, cross-sectional transmission electron microscopy (TEM) observation reveals that an approximately 4-nm-thick layer of BaSnO3 perfectly covers the lower YBCO thin film surface steps to a height of 1 to 2 unit cells of YBCO. The zero-resistance critical temperature Tc zero of both the upper and the lower YBCO thin films is higher than about 86 K.