Epitaxial Nature of New Insulating Material BaSnO3 for YBa2Cu3Ox-SIS Junctions
Summary :
BaSnO3 is proposed as a new insulating material with good surface coverage of the lower superconductor electrode for superconductor/insulator/superconductor (SIS) tunnel junctions made of high-Tc superconductor YBa2Cu3Ox (YBCO). This paper reports on investigation of the epitaxial nature of BaSnO3 on YBCO thin films and YBCO/BaSnO3 /YBCO trilayer formation that are grown in situ by reactive co-evaporation in oxygen radicals. Investigation was done by reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM), and X-ray diffraction (XRD). these observations confirm that (001)-oriented YBCO and (100)-oriented BaSnO3 thin films with atomically smooth surfaces grow epitaxially on each other. In addition, cross-sectional transmission electron microscopy (TEM) observation reveals that an approximately 4-nm-thick layer of BaSnO3 perfectly covers the lower YBCO thin film surface steps to a height of 1 to 2 unit cells of YBCO. The zero-resistance critical temperature Tc zero of both the upper and the lower YBCO thin films is higher than about 86 K.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E79-C No.9 pp.1260-1263
- Publication Date
- 1996/09/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Toward Digital and Analog Applications of Superconductors)
- Category
- Device technology
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Yasuo TAZOH, Shintaro MIYAZAWA, "Epitaxial Nature of New Insulating Material BaSnO3 for YBa2Cu3Ox-SIS Junctions" in IEICE TRANSACTIONS on Electronics,
vol. E79-C, no. 9, pp. 1260-1263, September 1996, doi: .
Abstract: BaSnO3 is proposed as a new insulating material with good surface coverage of the lower superconductor electrode for superconductor/insulator/superconductor (SIS) tunnel junctions made of high-Tc superconductor YBa2Cu3Ox (YBCO). This paper reports on investigation of the epitaxial nature of BaSnO3 on YBCO thin films and YBCO/BaSnO3 /YBCO trilayer formation that are grown in situ by reactive co-evaporation in oxygen radicals. Investigation was done by reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM), and X-ray diffraction (XRD). these observations confirm that (001)-oriented YBCO and (100)-oriented BaSnO3 thin films with atomically smooth surfaces grow epitaxially on each other. In addition, cross-sectional transmission electron microscopy (TEM) observation reveals that an approximately 4-nm-thick layer of BaSnO3 perfectly covers the lower YBCO thin film surface steps to a height of 1 to 2 unit cells of YBCO. The zero-resistance critical temperature Tc zero of both the upper and the lower YBCO thin films is higher than about 86 K.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_9_1260/_p
Copy
@ARTICLE{e79-c_9_1260,
author={Yasuo TAZOH, Shintaro MIYAZAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Epitaxial Nature of New Insulating Material BaSnO3 for YBa2Cu3Ox-SIS Junctions},
year={1996},
volume={E79-C},
number={9},
pages={1260-1263},
abstract={BaSnO3 is proposed as a new insulating material with good surface coverage of the lower superconductor electrode for superconductor/insulator/superconductor (SIS) tunnel junctions made of high-Tc superconductor YBa2Cu3Ox (YBCO). This paper reports on investigation of the epitaxial nature of BaSnO3 on YBCO thin films and YBCO/BaSnO3 /YBCO trilayer formation that are grown in situ by reactive co-evaporation in oxygen radicals. Investigation was done by reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM), and X-ray diffraction (XRD). these observations confirm that (001)-oriented YBCO and (100)-oriented BaSnO3 thin films with atomically smooth surfaces grow epitaxially on each other. In addition, cross-sectional transmission electron microscopy (TEM) observation reveals that an approximately 4-nm-thick layer of BaSnO3 perfectly covers the lower YBCO thin film surface steps to a height of 1 to 2 unit cells of YBCO. The zero-resistance critical temperature Tc zero of both the upper and the lower YBCO thin films is higher than about 86 K.},
keywords={},
doi={},
ISSN={},
month={September},}
Copy
TY - JOUR
TI - Epitaxial Nature of New Insulating Material BaSnO3 for YBa2Cu3Ox-SIS Junctions
T2 - IEICE TRANSACTIONS on Electronics
SP - 1260
EP - 1263
AU - Yasuo TAZOH
AU - Shintaro MIYAZAWA
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1996
AB - BaSnO3 is proposed as a new insulating material with good surface coverage of the lower superconductor electrode for superconductor/insulator/superconductor (SIS) tunnel junctions made of high-Tc superconductor YBa2Cu3Ox (YBCO). This paper reports on investigation of the epitaxial nature of BaSnO3 on YBCO thin films and YBCO/BaSnO3 /YBCO trilayer formation that are grown in situ by reactive co-evaporation in oxygen radicals. Investigation was done by reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM), and X-ray diffraction (XRD). these observations confirm that (001)-oriented YBCO and (100)-oriented BaSnO3 thin films with atomically smooth surfaces grow epitaxially on each other. In addition, cross-sectional transmission electron microscopy (TEM) observation reveals that an approximately 4-nm-thick layer of BaSnO3 perfectly covers the lower YBCO thin film surface steps to a height of 1 to 2 unit cells of YBCO. The zero-resistance critical temperature Tc zero of both the upper and the lower YBCO thin films is higher than about 86 K.
ER -
English
