IEICE TRANSACTIONS on Electronics
Epitaxial Nature of New Insulating Material BaSnO3 for YBa2Cu3Ox-SIS Junctions
Summary :
BaSnO3 is proposed as a new insulating material with good surface coverage of the lower superconductor electrode for superconductor/insulator/superconductor (SIS) tunnel junctions made of high-Tc superconductor YBa2Cu3Ox (YBCO). This paper reports on investigation of the epitaxial nature of BaSnO3 on YBCO thin films and YBCO/BaSnO3 /YBCO trilayer formation that are grown in situ by reactive co-evaporation in oxygen radicals. Investigation was done by reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM), and X-ray diffraction (XRD). these observations confirm that (001)-oriented YBCO and (100)-oriented BaSnO3 thin films with atomically smooth surfaces grow epitaxially on each other. In addition, cross-sectional transmission electron microscopy (TEM) observation reveals that an approximately 4-nm-thick layer of BaSnO3 perfectly covers the lower YBCO thin film surface steps to a height of 1 to 2 unit cells of YBCO. The zero-resistance critical temperature Tc zero of both the upper and the lower YBCO thin films is higher than about 86 K.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E79-C No.9 pp.1260-1263
- Publication Date
- 1996/09/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Toward Digital and Analog Applications of Superconductors)
- Category
- Device technology
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Yasuo TAZOH, Shintaro MIYAZAWA, "Epitaxial Nature of New Insulating Material BaSnO3 for YBa2Cu3Ox-SIS Junctions" in IEICE TRANSACTIONS on Electronics,
vol. E79-C, no. 9, pp. 1260-1263, September 1996, doi: .
Abstract: BaSnO3 is proposed as a new insulating material with good surface coverage of the lower superconductor electrode for superconductor/insulator/superconductor (SIS) tunnel junctions made of high-Tc superconductor YBa2Cu3Ox (YBCO). This paper reports on investigation of the epitaxial nature of BaSnO3 on YBCO thin films and YBCO/BaSnO3 /YBCO trilayer formation that are grown in situ by reactive co-evaporation in oxygen radicals. Investigation was done by reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM), and X-ray diffraction (XRD). these observations confirm that (001)-oriented YBCO and (100)-oriented BaSnO3 thin films with atomically smooth surfaces grow epitaxially on each other. In addition, cross-sectional transmission electron microscopy (TEM) observation reveals that an approximately 4-nm-thick layer of BaSnO3 perfectly covers the lower YBCO thin film surface steps to a height of 1 to 2 unit cells of YBCO. The zero-resistance critical temperature Tc zero of both the upper and the lower YBCO thin films is higher than about 86 K.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_9_1260/_p
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@ARTICLE{e79-c_9_1260,
author={Yasuo TAZOH, Shintaro MIYAZAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Epitaxial Nature of New Insulating Material BaSnO3 for YBa2Cu3Ox-SIS Junctions},
year={1996},
volume={E79-C},
number={9},
pages={1260-1263},
abstract={BaSnO3 is proposed as a new insulating material with good surface coverage of the lower superconductor electrode for superconductor/insulator/superconductor (SIS) tunnel junctions made of high-Tc superconductor YBa2Cu3Ox (YBCO). This paper reports on investigation of the epitaxial nature of BaSnO3 on YBCO thin films and YBCO/BaSnO3 /YBCO trilayer formation that are grown in situ by reactive co-evaporation in oxygen radicals. Investigation was done by reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM), and X-ray diffraction (XRD). these observations confirm that (001)-oriented YBCO and (100)-oriented BaSnO3 thin films with atomically smooth surfaces grow epitaxially on each other. In addition, cross-sectional transmission electron microscopy (TEM) observation reveals that an approximately 4-nm-thick layer of BaSnO3 perfectly covers the lower YBCO thin film surface steps to a height of 1 to 2 unit cells of YBCO. The zero-resistance critical temperature Tc zero of both the upper and the lower YBCO thin films is higher than about 86 K.},
keywords={},
doi={},
ISSN={},
month={September},}
Copy
TY - JOUR
TI - Epitaxial Nature of New Insulating Material BaSnO3 for YBa2Cu3Ox-SIS Junctions
T2 - IEICE TRANSACTIONS on Electronics
SP - 1260
EP - 1263
AU - Yasuo TAZOH
AU - Shintaro MIYAZAWA
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1996
AB - BaSnO3 is proposed as a new insulating material with good surface coverage of the lower superconductor electrode for superconductor/insulator/superconductor (SIS) tunnel junctions made of high-Tc superconductor YBa2Cu3Ox (YBCO). This paper reports on investigation of the epitaxial nature of BaSnO3 on YBCO thin films and YBCO/BaSnO3 /YBCO trilayer formation that are grown in situ by reactive co-evaporation in oxygen radicals. Investigation was done by reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM), and X-ray diffraction (XRD). these observations confirm that (001)-oriented YBCO and (100)-oriented BaSnO3 thin films with atomically smooth surfaces grow epitaxially on each other. In addition, cross-sectional transmission electron microscopy (TEM) observation reveals that an approximately 4-nm-thick layer of BaSnO3 perfectly covers the lower YBCO thin film surface steps to a height of 1 to 2 unit cells of YBCO. The zero-resistance critical temperature Tc zero of both the upper and the lower YBCO thin films is higher than about 86 K.
ER -
English
