IEICE TRANSACTIONS on Electronics
Fabrication of All-Epitaxial High-Tc SIS Tunnel Structures
Summary :
Fabrication of all-epitaxial high-Tc SIS tunnel junctions requires an atomically flat superconducting thin film to be grown and a proper insulating material to be selected. First, we study the initial growth mode of YBCO thin films and show that reducing the growth rate results in a very smooth surface. Second, perovskite-related compound oxides, PrGaO3 and NdGaO3, which have a small lattice mismatch with YBCO and good wetability, are shown to be promising insulating materials for all-epitaxial SIS tunnel junctions. We believe that these concepts will be useful in the development of all-epitaxial high-Tc SIS tunnel junctions with good electrical properties.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E77-C No.8 pp.1199-1203
- Publication Date
- 1994/08/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Section on Superconducting Devices)
- Category
- HTS
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Yasuo TAZOH, Junya KOBAYASHI, Masashi MUKAIDA, Shintaro MIYAZAWA, "Fabrication of All-Epitaxial High-Tc SIS Tunnel Structures" in IEICE TRANSACTIONS on Electronics,
vol. E77-C, no. 8, pp. 1199-1203, August 1994, doi: .
Abstract: Fabrication of all-epitaxial high-Tc SIS tunnel junctions requires an atomically flat superconducting thin film to be grown and a proper insulating material to be selected. First, we study the initial growth mode of YBCO thin films and show that reducing the growth rate results in a very smooth surface. Second, perovskite-related compound oxides, PrGaO3 and NdGaO3, which have a small lattice mismatch with YBCO and good wetability, are shown to be promising insulating materials for all-epitaxial SIS tunnel junctions. We believe that these concepts will be useful in the development of all-epitaxial high-Tc SIS tunnel junctions with good electrical properties.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_8_1199/_p
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@ARTICLE{e77-c_8_1199,
author={Yasuo TAZOH, Junya KOBAYASHI, Masashi MUKAIDA, Shintaro MIYAZAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Fabrication of All-Epitaxial High-Tc SIS Tunnel Structures},
year={1994},
volume={E77-C},
number={8},
pages={1199-1203},
abstract={Fabrication of all-epitaxial high-Tc SIS tunnel junctions requires an atomically flat superconducting thin film to be grown and a proper insulating material to be selected. First, we study the initial growth mode of YBCO thin films and show that reducing the growth rate results in a very smooth surface. Second, perovskite-related compound oxides, PrGaO3 and NdGaO3, which have a small lattice mismatch with YBCO and good wetability, are shown to be promising insulating materials for all-epitaxial SIS tunnel junctions. We believe that these concepts will be useful in the development of all-epitaxial high-Tc SIS tunnel junctions with good electrical properties.},
keywords={},
doi={},
ISSN={},
month={August},}
Copy
TY - JOUR
TI - Fabrication of All-Epitaxial High-Tc SIS Tunnel Structures
T2 - IEICE TRANSACTIONS on Electronics
SP - 1199
EP - 1203
AU - Yasuo TAZOH
AU - Junya KOBAYASHI
AU - Masashi MUKAIDA
AU - Shintaro MIYAZAWA
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 1994
AB - Fabrication of all-epitaxial high-Tc SIS tunnel junctions requires an atomically flat superconducting thin film to be grown and a proper insulating material to be selected. First, we study the initial growth mode of YBCO thin films and show that reducing the growth rate results in a very smooth surface. Second, perovskite-related compound oxides, PrGaO3 and NdGaO3, which have a small lattice mismatch with YBCO and good wetability, are shown to be promising insulating materials for all-epitaxial SIS tunnel junctions. We believe that these concepts will be useful in the development of all-epitaxial high-Tc SIS tunnel junctions with good electrical properties.
ER -
English
