A novel double-image Green's function approach is proposed to compute the frequency- dependent capacitance and conductance for the general CMOS oriented transmission lines with one protective layer. The ε-algorithm of Pade approximation is adopted to reduce the time for establishing coefficient matrix in this letter. The parameters gained from this new approach are shown to be in good agreement with the data obtained by the full-wave method and the total charge Green's function method.

The complex dielectric image Green's function for metal-insulator-semiconductor (MIS) technology is proposed in this paper through dielectric image method. Then the Epsilon algorithm for Pade approximation is used to accelerate the convergence of the infinite series summation resulted from the complex dielectric image Green's function. Because of the complex dielectric permittivity of semiconducting substrate, the real and imaginary part of the resulted Green's function is accelerated by Epsilon algorithm, respectively. Combined with the complex dielectric image Green's function, the frequency-dependent capacitance and conductance of the transmission lines and interconnects based on MIS technology are investigated through the method of moments (MoM). The computational results of our method for 2-D and 3-D extraction examples are well agreement with experimental data gained from chip measurement and other methods such as full-wave analysis and FastCap.