A design-for-testability method and an electrical interconnect test method are proposed to detect open defects occurring at interconnects among dies and input/output pins in 3D stacked ICs. As part of the design method, an nMOS and a diode are added to each input interconnect. The test method is based on measuring the quiescent current that is made to flow through an interconnect to be tested. The testability is examined both by SPICE simulation and by experimentation. The test method enabled the detection of open defects occurring at the newly designed interconnects of dies at experiments test speed of 1MHz. The simulation results reveal that an open defect generating additional delay of 279psec is detectable by the test method at a test speed of 200MHz beside of open defects that generate no logical errors.

In this paper, a built-in test circuit for an electrical interconnect test method is proposed to detect an open defect occurring at an interconnect between an IC and a printed circuit board. The test method is based on measuring the supply current of an inverter gate in the test circuit. A time-varying signal is provided to an interconnect as a test signal by the built-in test circuit. In this paper, the test circuit is evaluated by SPICE simulation and by experiments with a prototyping IC. The experimental results reveal that a hard open defect is detectable by the test method in addition to a resistive open defect and a capacitive open one at a test speed of 400 kHz.