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[Keyword] 4-port(2hit)

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  • Effect of PLC Signal Induced into VDSL System by Conductive Coupling

    Yoshiharu AKIYAMA  Hiroshi YAMANE  Nobuo KUWABARA  

     
    PAPER-Communication System EMC, Power System EMC

      Vol:
    E93-B No:7
      Page(s):
    1807-1813

    We investigated the effect of a high-speed power line communication (PLC) signal induced into a very high-speed digital subscriber line (VDSL) system by conductive coupling based on a network model. Four electronic devices with AC mains and telecommunication ports were modeled using a 4-port network, and the parameters of the network were obtained from measuring impedance and transmission loss. We evaluated the decoupling factor from the mains port to the telecommunication port of a VDSL modem using these parameters for the four electric and electronic devices. The results indicate that the mean value of the decoupling factor for the differential and common mode signals were more than 88 and 62 dB, respectively, in the frequency range of a PLC system. Taking the following parameters into consideration; decoupling factor Ld, the average transmission signal powers of VDSL and PLC, desired and undesired (DU) ratio, and transmission loss of a typical 300-m-long indoor telecommunication line, the VDSL system cannot be disturbed by the PLC signal induced into the VDSL modem from the AC mains port in normal installation.

  • RF MOSFET Characterization by Four-Port Measurement

    Shih-Dao WU  Guo-Wei HUANG  Kun-Ming CHEN  Hua-Chou TSENG  Tsun-Lai HSU  Chun-Yen CHANG  

     
    PAPER

      Vol:
    E88-C No:5
      Page(s):
    851-856

    RF MOSFET's are usually measured in common source configuration by a 2-port network analyzer, and the common gate and common drain S-parameters cannot be directly measured from a conventional 2-port test structure. In this work, a 4-port test structure for on-wafer measurement of RF MOSFET's is proposed. Four-port measurements for RF MOSFET's in different dimensions and the de-embedded procedures are performed up to 20 GHz. The S-parameters of the RF MOSFET in common source (CS), common gate (CG), and common drain (CD) configurations are obtained from a single DUT and one measurement procedure. The dependence of common source S-parameters of the device on substrate bias are also shown.