RF MOSFET Characterization by Four-Port Measurement
Summary :
RF MOSFET's are usually measured in common source configuration by a 2-port network analyzer, and the common gate and common drain S-parameters cannot be directly measured from a conventional 2-port test structure. In this work, a 4-port test structure for on-wafer measurement of RF MOSFET's is proposed. Four-port measurements for RF MOSFET's in different dimensions and the de-embedded procedures are performed up to 20 GHz. The S-parameters of the RF MOSFET in common source (CS), common gate (CG), and common drain (CD) configurations are obtained from a single DUT and one measurement procedure. The dependence of common source S-parameters of the device on substrate bias are also shown.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E88-C No.5 pp.851-856
- Publication Date
- 2005/05/01
- Publicized
- Online ISSN
- DOI
- 10.1093/ietele/e88-c.5.851
- Type of Manuscript
- Special Section PAPER (Special Section on Microelectronic Test Structures)
- Category
Authors
Keyword
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Shih-Dao WU, Guo-Wei HUANG, Kun-Ming CHEN, Hua-Chou TSENG, Tsun-Lai HSU, Chun-Yen CHANG, "RF MOSFET Characterization by Four-Port Measurement" in IEICE TRANSACTIONS on Electronics,
vol. E88-C, no. 5, pp. 851-856, May 2005, doi: 10.1093/ietele/e88-c.5.851.
Abstract: RF MOSFET's are usually measured in common source configuration by a 2-port network analyzer, and the common gate and common drain S-parameters cannot be directly measured from a conventional 2-port test structure. In this work, a 4-port test structure for on-wafer measurement of RF MOSFET's is proposed. Four-port measurements for RF MOSFET's in different dimensions and the de-embedded procedures are performed up to 20 GHz. The S-parameters of the RF MOSFET in common source (CS), common gate (CG), and common drain (CD) configurations are obtained from a single DUT and one measurement procedure. The dependence of common source S-parameters of the device on substrate bias are also shown.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e88-c.5.851/_p
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@ARTICLE{e88-c_5_851,
author={Shih-Dao WU, Guo-Wei HUANG, Kun-Ming CHEN, Hua-Chou TSENG, Tsun-Lai HSU, Chun-Yen CHANG, },
journal={IEICE TRANSACTIONS on Electronics},
title={RF MOSFET Characterization by Four-Port Measurement},
year={2005},
volume={E88-C},
number={5},
pages={851-856},
abstract={RF MOSFET's are usually measured in common source configuration by a 2-port network analyzer, and the common gate and common drain S-parameters cannot be directly measured from a conventional 2-port test structure. In this work, a 4-port test structure for on-wafer measurement of RF MOSFET's is proposed. Four-port measurements for RF MOSFET's in different dimensions and the de-embedded procedures are performed up to 20 GHz. The S-parameters of the RF MOSFET in common source (CS), common gate (CG), and common drain (CD) configurations are obtained from a single DUT and one measurement procedure. The dependence of common source S-parameters of the device on substrate bias are also shown.},
keywords={},
doi={10.1093/ietele/e88-c.5.851},
ISSN={},
month={May},}
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TY - JOUR
TI - RF MOSFET Characterization by Four-Port Measurement
T2 - IEICE TRANSACTIONS on Electronics
SP - 851
EP - 856
AU - Shih-Dao WU
AU - Guo-Wei HUANG
AU - Kun-Ming CHEN
AU - Hua-Chou TSENG
AU - Tsun-Lai HSU
AU - Chun-Yen CHANG
PY - 2005
DO - 10.1093/ietele/e88-c.5.851
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E88-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2005
AB - RF MOSFET's are usually measured in common source configuration by a 2-port network analyzer, and the common gate and common drain S-parameters cannot be directly measured from a conventional 2-port test structure. In this work, a 4-port test structure for on-wafer measurement of RF MOSFET's is proposed. Four-port measurements for RF MOSFET's in different dimensions and the de-embedded procedures are performed up to 20 GHz. The S-parameters of the RF MOSFET in common source (CS), common gate (CG), and common drain (CD) configurations are obtained from a single DUT and one measurement procedure. The dependence of common source S-parameters of the device on substrate bias are also shown.
ER -
English
