A hierarchical fault tracing method for VLSIs with bi-directional busses from CAD layout data in the CAD-linked electron beam test system is described. When fault tracing reaches at a cell connected to a bi-directional bus, our method is able to judge the direction of the signal flow, input or output, by using waveforms acquired by an EB tester, in a consistent manner independently of circuit functions as with a previously proposed tracing method for circuits without bi-directional busses.

An automatic transistor-level performance fault tracing method is proposed which is applicable to the case where only CAD layout data is available in the CAD-linked electron beam test system. The technique uses an integrated algorithm that combines a previously proposed transistor-level fault tracing algorithm and a successive circuit extraction from CAD layout data. An expansion of the algorithm to the fault tracing in a combined focused ion beam and electron beam test system which enables us to measure signals on the interconnections in the lower layers is also described. An application of the technique to a CMOS model layout with about 100 transistors shows its validity.

Precise matching of the SEM (secondary electron microscope) image of the DUT (device under test) interconnection pattern with the CAD layout is required in the CAD-linked electron beam test system. We propose the point pattern matching method that utilizes a corner pattern in the CAD layout. In the method, a corner pattern which consists of a small number of pixels is derived by taking into account the design rules of VLSIs. By using the corner pattern as a template, the matching points of the template are sought in both the SEM image and CAD layout. Then, the point image obtained from the SEM image of DUT is matched with that from the CAD layout. Even if the number of points obtained in the DUT pattern is different from that in the CAD layout due to the influence of noise present in the SEM image of the DUT pattern, the point matching method would be successful. The method is applied to nonpassivated and passivated LSIs. Even for the passivated LSI where the contrast in the SEM image is mainly determined by voltage contrast, matching is successful. The computing time of the proposed method is found to be shortened by a factor of 4 to 10 compared with that in a conventional correlation coefficient method.