What is required for the functional testing of modern high-density and fast IC and large scale integration (LSI) circuits is a method which has a time resolution in the subnanosecond region and a spatial resolution in the submicrometer region. Furthermore, the test probe must be easy to position on the circuit. To meet these requirements, a combined stroboscopic SEM-microcomputer test system has been developed. A microcomputer is used for striking the electron beam to a point of interest on the specimen surface, sampling and storing the signal waveforms, performing an operation of signal processing, and generating a data display or data output in numerics. Following a system description, application to a MOS LSI (4 k bit static random access memory-RAM) in the MHz regions is reported to demonstrate the efficiency of the system.

Our simulation method by using a combination of discrete event simulation and detailed parametric models of the VLSI manufacturing test system is verified by comparing simulated results with actual ones of a real wafer test facility of one-chip microcomputer in a Japanese semiconductor company. The simulated results are found to be in close agreement with the actual ones. As an application of the verified simulation method, we evaluate the economic effect of the introduction in the wafer test process of LSI testers that allows us to test multiple chips simultaneously. It is found that the optimum number of chips simultaneously tested by an LSI tester is 4 when considering both of the test cost per chip and the average test TAT.

An automatic tracing algorithm of the transistor-level performance faults in the waveform-based approach with CAD-linked electron beam test system which utilizes a transistor-level circuit data in CAD database is proposed. Performance faults mean some performance measure such as the temporal parameters (rise time, fall time and so on) lies outside of the specified range in a VLSI. Problems on automatic fault tracing in the transistor level are modeled by using graphs. Combinational circuits which consist of MOS transistors are considered. A single fault is assumed to be in a circuit. The algorithm utilizes Depth-First Search algorithm where faulty upstream interconnections are searched as deeply as possible. Treatment of the faults on downstream interconnections and on unmeasurable interconnections is given. Application of this algorithm to the 2k-transistor block of a CMOS circuit showed its validity in the simulation.

Following a discussion of various testing methods used in the electron beam (EB) test system, new waveform-based and image-based approaches in the CAD-linked electron beam (EB) test system are proposed. A waveform-based automatic tracing algorithm of the transistor-level performance faults is first discussed. Then, the method to improve the efficiency of an image-based method called dynamic fault imaging (DFI) by fully utilizing the CAD data is described. Third, the VLSI development cost is analyzed by using the fault models that make possible to take into consideration the effect of new testing technologies such as EB testing and focused ion beam (FIB) microfabrication. Finally, the future prospects are discussed.

Precise matching of the SEM (secondary electron microscope) image of the DUT (device under test) interconnection pattern with the CAD layout is required in the CAD-linked electron beam test system. We propose the point pattern matching method that utilizes a corner pattern in the CAD layout. In the method, a corner pattern which consists of a small number of pixels is derived by taking into account the design rules of VLSIs. By using the corner pattern as a template, the matching points of the template are sought in both the SEM image and CAD layout. Then, the point image obtained from the SEM image of DUT is matched with that from the CAD layout. Even if the number of points obtained in the DUT pattern is different from that in the CAD layout due to the influence of noise present in the SEM image of the DUT pattern, the point matching method would be successful. The method is applied to nonpassivated and passivated LSIs. Even for the passivated LSI where the contrast in the SEM image is mainly determined by voltage contrast, matching is successful. The computing time of the proposed method is found to be shortened by a factor of 4 to 10 compared with that in a conventional correlation coefficient method.

The EB tester line delay fault localization algorithm for combinational circuits is proposed where line delay fault probabilities are utilized to narrow fault candidates down to one efficiently. Probabilities for two main causes of line delay faults, defects of contact/vias along interconnections and crosstalk, are estimated through layout analysis. The algorithm was applied to 8 kinds of ISCAS'85 benchmark circuits to evaluate its performance where the guided probe (GP) diagnosis was used as the reference method. The proposed method can cut the number of probed lines to about 30% in average compared with those for the GP method. The total fault localization time was 31% of the time for the GP method and was 6% less than that of our previous method where the fault list generated in concurrent fault simulation is utilized.

A hierarchical fault tracing method for VLSIs with bi-directional busses from CAD layout data in the CAD-linked electron beam test system is described. When fault tracing reaches at a cell connected to a bi-directional bus, our method is able to judge the direction of the signal flow, input or output, by using waveforms acquired by an EB tester, in a consistent manner independently of circuit functions as with a previously proposed tracing method for circuits without bi-directional busses.

An automatic transistor-level performance fault tracing method is proposed which is applicable to the case where only CAD layout data is available in the CAD-linked electron beam test system. The technique uses an integrated algorithm that combines a previously proposed transistor-level fault tracing algorithm and a successive circuit extraction from CAD layout data. An expansion of the algorithm to the fault tracing in a combined focused ion beam and electron beam test system which enables us to measure signals on the interconnections in the lower layers is also described. An application of the technique to a CMOS model layout with about 100 transistors shows its validity.

In order to evaluate the effect of testing technologies such as electron beam (EB) testing and focused ion beam (FIB) reconstruction on the VLSI development cycle, the VLSI development period and cost are analyzed by using detailed fault models which make possible to take into consideration the effect of EB and FIB techniques. First, the specifications of fabricated VLSIs and the VLSI development cycle are modeled. Next the faults which can be diagnosed by such testing techniques are modeled. By using the parametric model of the VLSI development cycle, the development period and cost are analyzed. In the fault diagnosis stage, the use of an EB tester or the combinational use of an EB tester and an FIB equipment, instead of a traditional mechanical prober is considered. It is seen that the development period and cost are reduced by using EB and FIB diagnosis equipments by a factor of about 3. The effect of scan path method is also evaluated by making use of the same simulation method. Results show that the scan path design is effective for the reduction in both period and cost in the development cycle.

we evaluate the effect of express lots on production dispatching rule scheduling and cost in VLSI manufacturing final test process. In the assignment of express lots, we make comparisons of two rules, First In First Out (FIFO) rule which is widely used and WEIGHT+RPM rule which considers the time required for jig and temperature exchanges, the remaining processing time of the machine in use and the lot waiting time in queue. When using FIFO rule, the test efficiency begins to deteriorate and the test cost per chip begins to increase, if the content of express lots exceeds 15%. Furthermore, for 30% of express lots' content, the number of total processed lots decreases by 19% and the test cost per chip increases by 22% in comparison to the cases including no express lots. For WEIGHT+RPM rule, however, the test efficiency does not deteriorate and the test cost per chip does not increase even if the content of express lots is increased up to 50%. When we use WEIGHT+RPM rule, Express Lots Tolerances (ELTs), defined as the maximum content of express lots which permits the deterioration of the system characteristics by 5%, are about three times as high as ones when using FIFO rule. It is also found that WEIGHT+RPM rule maintains higher ELTs against the changes in the numbers of planned chips and prepared jigs as compared with FIFO rule.

The effect of lot size change and test processing logistics on VLSI manufacturing final test process efficiency and cost due to the transition of from conventional 5 or 6 inches to 300 mm (12 inches) in wafer size is evaluated through simulation analysis. Simulated results show that a high test efficiency and a low test cost are maintained regardless of arrival lot size in the range of the number of 300 mm wafers per lot from 1 to 25 and the content of express lots in the range of up to 50% by using WEIGHT+RPM rule and the right final test processing logistics. WEIGHT+RPM rule is the rule that considers the jig and temperature exchanging time, the lot waiting time in queue and also the remaining processing time of the machine in use. The logistics has a small processing and moving lot size equal to the batch size of testing equipment.

An automatic LSI package lead inspection system for backside lead specification is proposed. The proposed system inspects not only lead backside contamination but also the mechanical lead specification such as lead pitch, lead offset and lead overhangs (variations in lead lengths). The total inspection time of a UQFP package with a lead count of 256 is less than the required time of 1 second. Our proposed method is superior to the threshold method used usually, especially for the defect between leads.

We have developed a three-dimensional eye movement simulator that simulates eye movement. The simulator allows us to extract the instantaneous eye movement rotation axes from clinical data sequences. It calculates the plane formed by rotation axes and displays it on an eyeball with rotation axes. It also extracts the innervations for eye muscles. The developed simulator is mainly programmed by a CG programming language, OpenGL. First, the simulator was applied to saccadic eye movement data in order to show the so-called Listing's plane on which all hypothetical rotation axes lie. Next, it was applied to clinical data sequences of two patients with benign paroxysmal positional vertigo (BPPV). Instantaneous actual rotation axes and innervations for eye muscle extracted from data sequences have special characteristics. These results are useful for the elucidation of the mechanism of vestibular symptoms, particularly vertigo.

We have proposed and successfully demonstrated a two step method for localizing defects on an LSI chip. The first step is the same as a conventional laser-SQUID (L-SQUID) imaging where a SQUID and a laser beam are fixed during LSI chip scanning. The second step is a new L-SQUID imaging where a laser beam is stayed at the point, located in the first step results, during SQUID scanning. In the second step, a SQUID size (Aeff) and the distance between the SQUID and the LSI chip (ΔZ) are key factors limiting spatial resolution. In order to improve the spatial resolution, we have developed a micro-SQUID and the vacuum chamber housing both the micro-SQUID and the LSI chip. The Aeff of the micro-SQUID is a thousand of that of a conventional SQUID. The minimum value of ΔZ was successfully reduced to 25 µm by setting both the micro-SQUID and an LSI chip in the same vacuum chamber. The spatial resolution in the second step was shown to be 53 µm. Demonstration of actual complicated defects localization was succeeded, and this result suggests that the two step localization method is useful for LSI failure analysis.

A method to improve the efficiency of dynamic fault imaging (DFI) by fully utilizing the CAD data in the CAD-linked electron beam test system is proposed. In the method, in order to shorten the long acquisition time of the stroboscopic voltage contrast images over the whole area of the chip during the entire test cycle, only the area and phase (time) required for fault tracing are selected by utilizing the CAD data. Furthermore, image processing techniques are combined with the method to improve the efficiency of the DFI. In particular, the signal averaging technique is used in order to improve the signal-to-noise ratio in the stroboscopic images where all voltage information data on the equipotential electrode recognized by the CAD layout data are averaged. This enables us to reduce the acquisition time of images. Moreover, the experimental system is set up so that the image processing can be performed in parallel with the acquisition of the stroboscopic images. The proposed method is applied to part of a 2k-transistor block of a nonpassivated CMOS LSI where a marginal fault is detected. The result shows that the method is an efficient approach to the fully automatic fault diagnosis in the CAD-linked electron beam test system. The proposed method could improve the efficiency of the conventional DFI by a factor of more than 1000.