In this paper, we have investigated the etching selectivity of HfN encapsulating layer for high quality PtHf-alloy silicide (PtHfSi) formation with low contact resistivity on Si(100). The HfN(10 nm)/PtHf(20 nm)/p-Si(100) stacked layer was in-situ deposited by RF-magnetron sputtering at room temperature. Then, silicidation was carried out at 500°C/20 min in N2/4.9%H2 ambient. Next, the HfN encapsulating layer was etched for 1-10 min by buffered-HF (BHF) followed by the unreacted PtHf metal etching. We have found that the etching duration of the 10-nm-thick HfN encapsulating layer should be shorter than 6 min to maintain the PtHfSi crystallinity. This is probably because the PtHf-alloy silicide was gradually etched by BHF especially for the Hf atoms after the HfN was completely removed. The optimized etching process realized the ultra-low contact resistivity of PtHfSi to p+/n-Si(100) and n+/p-Si(100) such as 9.4×10-9Ωcm2 and 4.8×10-9Ωcm2, respectively, utilizing the dopant segregation process. The control of etching duration of HfN encapsulating layer is important to realize the high quality PtHfSi formation with low contact resistivity.

We have investigated PtHf silicide formation utilizing a developed PtHf-alloy target to realize low contact resistivity for the first time. A 20 nm-thick PtHf-alloy thin film was deposited on the n-Si(100) by RF magnetron sputtering at room temperature. Then, silicidation was carried out by rapid thermal annealing (RTA) system at 450-600°C/5 min in N2/4.9%H2 ambient. The PtHf-alloy silcide, PtHfSi, layers were successfully formed, and the Schottky barrier height (SBH) for electron of 0.45 eV was obtained by 450°C silicidation. Furthermore, low contact resistivity was achieved for fabricated PtHSi such as 8.4x10-8 Ωcm2 evaluated by cross-bridge Kelvin resistor (CBKR) method.