PtHf Silicide Formation Utilizing PtHf-Alloy Target for Low Contact Resistivity
Summary :
We have investigated PtHf silicide formation utilizing a developed PtHf-alloy target to realize low contact resistivity for the first time. A 20 nm-thick PtHf-alloy thin film was deposited on the n-Si(100) by RF magnetron sputtering at room temperature. Then, silicidation was carried out by rapid thermal annealing (RTA) system at 450-600°C/5 min in N2/4.9%H2 ambient. The PtHf-alloy silcide, PtHfSi, layers were successfully formed, and the Schottky barrier height (SBH) for electron of 0.45 eV was obtained by 450°C silicidation. Furthermore, low contact resistivity was achieved for fabricated PtHSi such as 8.4x10-8 Ωcm2 evaluated by cross-bridge Kelvin resistor (CBKR) method.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E99-C No.5 pp.510-515
- Publication Date
- 2016/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E99.C.510
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
Authors
Shun-ichiro OHMI
Tokyo Institute of Technology
Mengyi CHEN
Tokyo Institute of Technology
Xiaopeng WU
Tokyo Institute of Technology
Yasushi MASAHIRO
TANAKA Holdings Co., Ltd.
Keyword
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Shun-ichiro OHMI, Mengyi CHEN, Xiaopeng WU, Yasushi MASAHIRO, "PtHf Silicide Formation Utilizing PtHf-Alloy Target for Low Contact Resistivity" in IEICE TRANSACTIONS on Electronics,
vol. E99-C, no. 5, pp. 510-515, May 2016, doi: 10.1587/transele.E99.C.510.
Abstract: We have investigated PtHf silicide formation utilizing a developed PtHf-alloy target to realize low contact resistivity for the first time. A 20 nm-thick PtHf-alloy thin film was deposited on the n-Si(100) by RF magnetron sputtering at room temperature. Then, silicidation was carried out by rapid thermal annealing (RTA) system at 450-600°C/5 min in N2/4.9%H2 ambient. The PtHf-alloy silcide, PtHfSi, layers were successfully formed, and the Schottky barrier height (SBH) for electron of 0.45 eV was obtained by 450°C silicidation. Furthermore, low contact resistivity was achieved for fabricated PtHSi such as 8.4x10-8 Ωcm2 evaluated by cross-bridge Kelvin resistor (CBKR) method.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E99.C.510/_p
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@ARTICLE{e99-c_5_510,
author={Shun-ichiro OHMI, Mengyi CHEN, Xiaopeng WU, Yasushi MASAHIRO, },
journal={IEICE TRANSACTIONS on Electronics},
title={PtHf Silicide Formation Utilizing PtHf-Alloy Target for Low Contact Resistivity},
year={2016},
volume={E99-C},
number={5},
pages={510-515},
abstract={We have investigated PtHf silicide formation utilizing a developed PtHf-alloy target to realize low contact resistivity for the first time. A 20 nm-thick PtHf-alloy thin film was deposited on the n-Si(100) by RF magnetron sputtering at room temperature. Then, silicidation was carried out by rapid thermal annealing (RTA) system at 450-600°C/5 min in N2/4.9%H2 ambient. The PtHf-alloy silcide, PtHfSi, layers were successfully formed, and the Schottky barrier height (SBH) for electron of 0.45 eV was obtained by 450°C silicidation. Furthermore, low contact resistivity was achieved for fabricated PtHSi such as 8.4x10-8 Ωcm2 evaluated by cross-bridge Kelvin resistor (CBKR) method.},
keywords={},
doi={10.1587/transele.E99.C.510},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - PtHf Silicide Formation Utilizing PtHf-Alloy Target for Low Contact Resistivity
T2 - IEICE TRANSACTIONS on Electronics
SP - 510
EP - 515
AU - Shun-ichiro OHMI
AU - Mengyi CHEN
AU - Xiaopeng WU
AU - Yasushi MASAHIRO
PY - 2016
DO - 10.1587/transele.E99.C.510
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E99-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2016
AB - We have investigated PtHf silicide formation utilizing a developed PtHf-alloy target to realize low contact resistivity for the first time. A 20 nm-thick PtHf-alloy thin film was deposited on the n-Si(100) by RF magnetron sputtering at room temperature. Then, silicidation was carried out by rapid thermal annealing (RTA) system at 450-600°C/5 min in N2/4.9%H2 ambient. The PtHf-alloy silcide, PtHfSi, layers were successfully formed, and the Schottky barrier height (SBH) for electron of 0.45 eV was obtained by 450°C silicidation. Furthermore, low contact resistivity was achieved for fabricated PtHSi such as 8.4x10-8 Ωcm2 evaluated by cross-bridge Kelvin resistor (CBKR) method.
ER -
English
