A sandwich structure type RF-MEMS variable capacitor is proposed, that consists of a movable middle plate, and fixed top and bottom plates having different areas. Simulation results show that the proposed capacitor can operate at a control voltage of less than 3.2 V; it achieves a tuning range of 4.8:1 (capacitance:630-130 fF) in the range of 0 to 3.2 V and at a frequency of 7.5 GHz.

This paper presents the design, fabrication and characterization of a low actuation voltage capacitive shunt RF-MEMS switch for microwave and millimeter-wave applications based on a corrugated electrostatic actuated bridge suspended over a concave structure of coplanar waveguide (CPW), with sputtered nickel as the structural material for the bridge and gold for CPW line, fabricated on high-resistivity silicon (HRS) substrate using IC compatible processes for modular integration in a communication devices. The residual stress is very low because having both ends corrugated structure of the bridge in concave structure. The residual stress is calculated about 3-15 MPa in corrugated bridge and 30 MPa in flat bridge. The corrugated bridge of the concave structure requires lower actuation voltages 20-80 V than 50-100 V of the flat bridge of the planar structure in 0.3 to 1.0 µm thick Ni capacitive shunt RF-MEMS switch, in insertion loss 1.0 dB, return loss 12 dB, power loss 10 dB and isolation 28 dB from 0.5 up to 40 GHz. The residual stress of the bridge material and structure is critical to lower the actuation voltage.