Low Actuation Voltage Capacitive Shunt RF-MEMS Switch Having a Corrugated Bridge

Yo-Tak SONG; Hai-Young LEE; Masayoshi ESASHI

doi:10.1093/ietele/e89-c.12.1880

Low Actuation Voltage Capacitive Shunt RF-MEMS Switch Having a Corrugated Bridge

Yo-Tak SONG, Hai-Young LEE, Masayoshi ESASHI

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This paper presents the design, fabrication and characterization of a low actuation voltage capacitive shunt RF-MEMS switch for microwave and millimeter-wave applications based on a corrugated electrostatic actuated bridge suspended over a concave structure of coplanar waveguide (CPW), with sputtered nickel as the structural material for the bridge and gold for CPW line, fabricated on high-resistivity silicon (HRS) substrate using IC compatible processes for modular integration in a communication devices. The residual stress is very low because having both ends corrugated structure of the bridge in concave structure. The residual stress is calculated about 3-15 MPa in corrugated bridge and 30 MPa in flat bridge. The corrugated bridge of the concave structure requires lower actuation voltages 20-80 V than 50-100 V of the flat bridge of the planar structure in 0.3 to 1.0 µm thick Ni capacitive shunt RF-MEMS switch, in insertion loss 1.0 dB, return loss 12 dB, power loss 10 dB and isolation 28 dB from 0.5 up to 40 GHz. The residual stress of the bridge material and structure is critical to lower the actuation voltage.

Publication: IEICE TRANSACTIONS on Electronics Vol.E89-C No.12 pp.1880-1887

Publication Date: 2006/12/01

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Online ISSN: 1745-1353

DOI: 10.1093/ietele/e89-c.12.1880

Type of Manuscript: Special Section PAPER (Special Section on Emerging Microwave Techniques)

Category: Passive Circuits/Components

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Yo-Tak SONG, Hai-Young LEE, Masayoshi ESASHI, "Low Actuation Voltage Capacitive Shunt RF-MEMS Switch Having a Corrugated Bridge" in IEICE TRANSACTIONS on Electronics, vol. E89-C, no. 12, pp. 1880-1887, December 2006, doi: 10.1093/ietele/e89-c.12.1880.
Abstract: This paper presents the design, fabrication and characterization of a low actuation voltage capacitive shunt RF-MEMS switch for microwave and millimeter-wave applications based on a corrugated electrostatic actuated bridge suspended over a concave structure of coplanar waveguide (CPW), with sputtered nickel as the structural material for the bridge and gold for CPW line, fabricated on high-resistivity silicon (HRS) substrate using IC compatible processes for modular integration in a communication devices. The residual stress is very low because having both ends corrugated structure of the bridge in concave structure. The residual stress is calculated about 3-15 MPa in corrugated bridge and 30 MPa in flat bridge. The corrugated bridge of the concave structure requires lower actuation voltages 20-80 V than 50-100 V of the flat bridge of the planar structure in 0.3 to 1.0 µm thick Ni capacitive shunt RF-MEMS switch, in insertion loss 1.0 dB, return loss 12 dB, power loss 10 dB and isolation 28 dB from 0.5 up to 40 GHz. The residual stress of the bridge material and structure is critical to lower the actuation voltage.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.12.1880/_p

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@ARTICLE{e89-c_12_1880,
author={Yo-Tak SONG, Hai-Young LEE, Masayoshi ESASHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low Actuation Voltage Capacitive Shunt RF-MEMS Switch Having a Corrugated Bridge},
year={2006},
volume={E89-C},
number={12},
pages={1880-1887},
abstract={This paper presents the design, fabrication and characterization of a low actuation voltage capacitive shunt RF-MEMS switch for microwave and millimeter-wave applications based on a corrugated electrostatic actuated bridge suspended over a concave structure of coplanar waveguide (CPW), with sputtered nickel as the structural material for the bridge and gold for CPW line, fabricated on high-resistivity silicon (HRS) substrate using IC compatible processes for modular integration in a communication devices. The residual stress is very low because having both ends corrugated structure of the bridge in concave structure. The residual stress is calculated about 3-15 MPa in corrugated bridge and 30 MPa in flat bridge. The corrugated bridge of the concave structure requires lower actuation voltages 20-80 V than 50-100 V of the flat bridge of the planar structure in 0.3 to 1.0 µm thick Ni capacitive shunt RF-MEMS switch, in insertion loss 1.0 dB, return loss 12 dB, power loss 10 dB and isolation 28 dB from 0.5 up to 40 GHz. The residual stress of the bridge material and structure is critical to lower the actuation voltage.},
keywords={},
doi={10.1093/ietele/e89-c.12.1880},
ISSN={1745-1353},
month={December},}

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TY - JOUR
TI - Low Actuation Voltage Capacitive Shunt RF-MEMS Switch Having a Corrugated Bridge
T2 - IEICE TRANSACTIONS on Electronics
SP - 1880
EP - 1887
AU - Yo-Tak SONG
AU - Hai-Young LEE
AU - Masayoshi ESASHI
PY - 2006
DO - 10.1093/ietele/e89-c.12.1880
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2006
AB - This paper presents the design, fabrication and characterization of a low actuation voltage capacitive shunt RF-MEMS switch for microwave and millimeter-wave applications based on a corrugated electrostatic actuated bridge suspended over a concave structure of coplanar waveguide (CPW), with sputtered nickel as the structural material for the bridge and gold for CPW line, fabricated on high-resistivity silicon (HRS) substrate using IC compatible processes for modular integration in a communication devices. The residual stress is very low because having both ends corrugated structure of the bridge in concave structure. The residual stress is calculated about 3-15 MPa in corrugated bridge and 30 MPa in flat bridge. The corrugated bridge of the concave structure requires lower actuation voltages 20-80 V than 50-100 V of the flat bridge of the planar structure in 0.3 to 1.0 µm thick Ni capacitive shunt RF-MEMS switch, in insertion loss 1.0 dB, return loss 12 dB, power loss 10 dB and isolation 28 dB from 0.5 up to 40 GHz. The residual stress of the bridge material and structure is critical to lower the actuation voltage.
ER -