The heterointerfaces of Al0.3Ga0.7As/GaAs single quantum wells (SQWs) and the characteristics of SQW lasers grown on Si substrates with Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers (AlGaAs/AlGaP ILs) entirely by metalorganic chemical vapor deposition (MOCVD) are reported. The effects of thermal cycle annealing on the crystallinity and the lasing characteristics of GaAs/Si are also reported. By using the AlGaAs/AlGaP ILs, SQWs with a specular surface morphology and a smoother heterointerface can be grown on a Si substrate. Thermal cycle annealing is found to improve the crystallinity of GaAs/Si and to contribute to room-temperature continuous-wave operation of lasers on Si substrates. The combinations of the techniques of AlGaAs/AlGaP ILs and thermal cycle annealing improve the lasing characteristics: an average threshold current density of 1.83 kA/cm2, an average differential quantum efficiency of 52%, an internal quantum efficiency of 83%, an intrinsic mode loss coefficient of 23cm-1, a differential gain coefficient of 1.9cm/A, and a transparency current density of 266 A/cm2, which are superior to those of the two-step-grown laser on a Si substrate. The improvements of the lasing characteristics result from the smooth heterointerfaces of the AlGaAs/AlGaP ILs.

The heterointerfaces of Al0.3Ga0.7As/GaAs single quantum wells (SQWs) and the characteristics of SQW lasers grown on Si substrates with Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers (AlGaAs/AlGaP ILs) entirely by metalorganic chemical vapor deposition (MOCVD) are reported. The effects of thermal cycle annealing on the crystallinity and the lasing characteristics of GaAs/Si are also reported. By using the AlGaAs/AlGaP ILs, SQWs with a specular surface morphology and a smoother heterointerface can be grown on a Si substrate. Thermal cycle annealing is found to improve the crystallinity of GaAs/Si and to contribute to room-temperature continuous-wave operation of lasers on Si substrates. The combinations of the techniques of AlGaAs/AlGaP ILs and thermal cycle annealing improve the lasing characteristics: an average threshold current density of 1.83 kA/cm2, an average differential quantum efficiency of 52%, an internal quantum efficiency of 83%, an intrinsic mode loss coefficient of 23 cm-1, a differential gain coefficient of 1.9 cm/A, and a transparency current density of 266 A/cm2, which are superior to those of the two-step-grown laser on a Si substrate. The improvements of the lasing characteristics result from the smooth heterointerfaces of the AlGaAs/AlGaP ILs.