Investigations were carried out on metalorganic-chemical-vapor-deposition (MOCVD)-grown strained AlGaN/ GaN/sapphire structures using X-ray diffratometry. While AlGaN with lower AlN molar fraction (< 0.1) is under the in-plane compressive stress, it is under the in-plane tensile stress with high AlN molar fraction (> 0.1). Though tensile stress caused the cracks in AlGaN layer with high AlN molar fraction, we found that the cracks dramatically reduced when the GaN layer quality was not good. Using this technique, we fabricated a GaInN multi-quantum-well (MQW) surface emitting diodes were fabricated on 15 pairs of AlGaN/GaN distributed Bragg reflector (DBR) structures. The reflectivity of 15 pairs of AlGaN/GaN DBR structure has been shown as 75% at 435 nm. Considerably higher output power (1.5 times) has been observed for DBR based GaInN MQW LED when compared with non-DBR based MQW structures.

We have demonstrated the successful fabrication of the monolithic integration of a GaAs metalsemiconductor field-effect transistor (MESFET), an AlGaAs/InGaAs laser and a p-n photodetector grown on a SiO2 backcoated p-Si substrate using selective regrowth by metalorganic chemical vapor deposition (MOCVD). The use of SiO2 backcoated Si substrate is effective in suppressing unintentional Si autodoping and obtaining a good pinch-off GaAs MESFET. The MESFET with 2.5400 µm2 gate exhibited a transconductance of 90 mS/mm and a threshold voltage of 2.2 V. The reliability of the laser on the Si substrate can be improved by the strain-relieved AlGaAs/InGaAs laser with the InGaAs intermediate layer. The longest lifetime of the laser is 8 h at 27. During the GaAs layer growth, the p-n photodetector is formed near the surface of the p-Si substrate by diffusing the As atoms.

In this paper, we report the calculations of the quantum efficiencies of new types of photodiodes that have the ability to demultiplex the incident light beam into two or three independent outputs according to its wavelength, and determine the diode parameters that give maximum efficiency and low crosstalk. Two types of diodes were fabricated with LPE grown InGaAsP/InP quaternary system which is one of the most useful materials in the 1.01.7 µm low-loss spectral window of optical fiber. One diode divides the input light beam into two outputs and the other does in three outputs. The experimentally obtained spectral responses of the diodes were in good agreement with the calculated ones. The fabricated diodes exhibited nearly 100% internal quantum efficiency and crosstalks of 34 dB at λ1.0 µm and below 50 dB at λ1.35 µm, respectively, where the efficiencies of two outputs take their maximum values.

The heterointerfaces of Al0.3Ga0.7As/GaAs single quantum wells (SQWs) and the characteristics of SQW lasers grown on Si substrates with Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers (AlGaAs/AlGaP ILs) entirely by metalorganic chemical vapor deposition (MOCVD) are reported. The effects of thermal cycle annealing on the crystallinity and the lasing characteristics of GaAs/Si are also reported. By using the AlGaAs/AlGaP ILs, SQWs with a specular surface morphology and a smoother heterointerface can be grown on a Si substrate. Thermal cycle annealing is found to improve the crystallinity of GaAs/Si and to contribute to room-temperature continuous-wave operation of lasers on Si substrates. The combinations of the techniques of AlGaAs/AlGaP ILs and thermal cycle annealing improve the lasing characteristics: an average threshold current density of 1.83 kA/cm2, an average differential quantum efficiency of 52%, an internal quantum efficiency of 83%, an intrinsic mode loss coefficient of 23cm-1, a differential gain coefficient of 1.9cm/A, and a transparency current density of 266 A/cm2, which are superior to those of the two-step-grown laser on a Si substrate. The improvements of the lasing characteristics result from the smooth heterointerfaces of the AlGaAs/AlGaP ILs.

We propose herein a motion detection artificial vision model which uses analog electronic circuits. The proposed model is comprised of four layers. The first layer is a differentiation circuit of the large CR coefficient, and the second layer is a differentiation circuit of the small CR coefficient. Thus, the speed of the movement object is detected. The third layer is a difference circuit for detecting the movement direction, and the fourth layer is a multiple circuit for detecting pure motion output. When the object moves from left to right the model outputs a positive signal, and when the object moves from right to left the model outputs a negative signal. We first designed a one-dimensional model, which we later enhanced to obtain a two-dimensional model. The model was shown to be capable of detecting a movement object in the image. Using analog electronic circuits, the number of connections decrease and real-time processing becomes feasible. In addition, the proposed model offers excellent fault tolerance. Moreover, the proposed model can be used to detect two or more objects, which is advantageous for detection in an environment in which several objects are moving in multiple directions simultaneously. Thus, the proposed model allows practical, cheap movement sensors to be realized for applications such as the measurement of road traffic volume or counting the number of pedestrians in an area. From a technological viewpoint, the proposed model facilitates clarification of the mechanism of the biomedical vision system, which should enable design and simulation by an analog electric circuit for detecting the movement and speed of objects.

The heterointerfaces of Al0.3Ga0.7As/GaAs single quantum wells (SQWs) and the characteristics of SQW lasers grown on Si substrates with Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers (AlGaAs/AlGaP ILs) entirely by metalorganic chemical vapor deposition (MOCVD) are reported. The effects of thermal cycle annealing on the crystallinity and the lasing characteristics of GaAs/Si are also reported. By using the AlGaAs/AlGaP ILs, SQWs with a specular surface morphology and a smoother heterointerface can be grown on a Si substrate. Thermal cycle annealing is found to improve the crystallinity of GaAs/Si and to contribute to room-temperature continuous-wave operation of lasers on Si substrates. The combinations of the techniques of AlGaAs/AlGaP ILs and thermal cycle annealing improve the lasing characteristics: an average threshold current density of 1.83 kA/cm2, an average differential quantum efficiency of 52%, an internal quantum efficiency of 83%, an intrinsic mode loss coefficient of 23 cm-1, a differential gain coefficient of 1.9 cm/A, and a transparency current density of 266 A/cm2, which are superior to those of the two-step-grown laser on a Si substrate. The improvements of the lasing characteristics result from the smooth heterointerfaces of the AlGaAs/AlGaP ILs.

InGaAsP/GaAs0.7P0.3 stripe geometry DH visible laser diodes having a p-type cap layer are fabricated. The advantage of the use of GaAs0.7P0.3 substrate instead of GaAs0.6P0.4 is discussed in terms of the injected carrier distribution ratio in direct valley (Γ) to X and L valleys. The fabricated diodes operate at room temperature under pulsed-condition. Minimum threshold current density is 4.5 kA/cm2 at a lasing wavelength of 663.0 nm.

A simple model for pattern recognition is proposed, which can be approximated by a multilayer network. An application to handwritten character recognition is simulated and characters were recognized with an accuracy about 90%. Using this model enables the system to be simpler.