Investigations were carried out on metalorganic-chemical-vapor-deposition (MOCVD)-grown strained AlGaN/ GaN/sapphire structures using X-ray diffratometry. While AlGaN with lower AlN molar fraction (< 0.1) is under the in-plane compressive stress, it is under the in-plane tensile stress with high AlN molar fraction (> 0.1). Though tensile stress caused the cracks in AlGaN layer with high AlN molar fraction, we found that the cracks dramatically reduced when the GaN layer quality was not good. Using this technique, we fabricated a GaInN multi-quantum-well (MQW) surface emitting diodes were fabricated on 15 pairs of AlGaN/GaN distributed Bragg reflector (DBR) structures. The reflectivity of 15 pairs of AlGaN/GaN DBR structure has been shown as 75% at 435 nm. Considerably higher output power (1.5 times) has been observed for DBR based GaInN MQW LED when compared with non-DBR based MQW structures.

We have succeeded in demonstrating high-performance four-channel 25 Gb/s integrated receiver for 100 Gb/s Ethernet with a built-in spatial Demux optics and an integrated PD array. All components which configure to the Demux optics adhered to a prism. Because of the shaping accuracy for prism, the insertion loss was able to suppress to 0.8 dB with small size. The connection point of the package for high speed electrical signals was improved to decrease the transmission loss. The small size of 12 mm 17 mm 7 mm compact package with a side-wall electrical connector has been achieved, which is compatible with the assembly in CFP2 form-factor. We observed the sensitivity at average power of -12.1 dBm and the power penalty of sensitivity due to the crosstalk of less than 0.1 dB.