Room Temperature Operation of InGaAsP/GaAs0.7P0.3 Double Heterostructure Oxide Stripe Lasers
Summary :
InGaAsP/GaAs0.7P0.3 stripe geometry DH visible laser diodes having a p-type cap layer are fabricated. The advantage of the use of GaAs0.7P0.3 substrate instead of GaAs0.6P0.4 is discussed in terms of the injected carrier distribution ratio in direct valley (Γ) to X and L valleys. The fabricated diodes operate at room temperature under pulsed-condition. Minimum threshold current density is 4.5 kA/cm2 at a lasing wavelength of 663.0 nm.
- Publication
- IEICE TRANSACTIONS on transactions Vol.E69-E No.4 pp.378-381
- Publication Date
- 1986/04/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
- Category
- Lasers and Related Devices
Authors
Keyword
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Sadao FUJII, Shiro SAKAI, Masayoshi UMENO, "Room Temperature Operation of InGaAsP/GaAs0.7P0.3 Double Heterostructure Oxide Stripe Lasers" in IEICE TRANSACTIONS on transactions,
vol. E69-E, no. 4, pp. 378-381, April 1986, doi: .
Abstract: InGaAsP/GaAs0.7P0.3 stripe geometry DH visible laser diodes having a p-type cap layer are fabricated. The advantage of the use of GaAs0.7P0.3 substrate instead of GaAs0.6P0.4 is discussed in terms of the injected carrier distribution ratio in direct valley (Γ) to X and L valleys. The fabricated diodes operate at room temperature under pulsed-condition. Minimum threshold current density is 4.5 kA/cm2 at a lasing wavelength of 663.0 nm.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e69-e_4_378/_p
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@ARTICLE{e69-e_4_378,
author={Sadao FUJII, Shiro SAKAI, Masayoshi UMENO, },
journal={IEICE TRANSACTIONS on transactions},
title={Room Temperature Operation of InGaAsP/GaAs0.7P0.3 Double Heterostructure Oxide Stripe Lasers},
year={1986},
volume={E69-E},
number={4},
pages={378-381},
abstract={InGaAsP/GaAs0.7P0.3 stripe geometry DH visible laser diodes having a p-type cap layer are fabricated. The advantage of the use of GaAs0.7P0.3 substrate instead of GaAs0.6P0.4 is discussed in terms of the injected carrier distribution ratio in direct valley (Γ) to X and L valleys. The fabricated diodes operate at room temperature under pulsed-condition. Minimum threshold current density is 4.5 kA/cm2 at a lasing wavelength of 663.0 nm.},
keywords={},
doi={},
ISSN={},
month={April},}
Copy
TY - JOUR
TI - Room Temperature Operation of InGaAsP/GaAs0.7P0.3 Double Heterostructure Oxide Stripe Lasers
T2 - IEICE TRANSACTIONS on transactions
SP - 378
EP - 381
AU - Sadao FUJII
AU - Shiro SAKAI
AU - Masayoshi UMENO
PY - 1986
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E69-E
IS - 4
JA - IEICE TRANSACTIONS on transactions
Y1 - April 1986
AB - InGaAsP/GaAs0.7P0.3 stripe geometry DH visible laser diodes having a p-type cap layer are fabricated. The advantage of the use of GaAs0.7P0.3 substrate instead of GaAs0.6P0.4 is discussed in terms of the injected carrier distribution ratio in direct valley (Γ) to X and L valleys. The fabricated diodes operate at room temperature under pulsed-condition. Minimum threshold current density is 4.5 kA/cm2 at a lasing wavelength of 663.0 nm.
ER -
English
