Optoelectronic Integrated Circuits Grown on Si Substrates

Takashi EGAWA; Takashi JIMBO; Masayoshi UMENO

Optoelectronic Integrated Circuits Grown on Si Substrates

Takashi EGAWA, Takashi JIMBO, Masayoshi UMENO

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We have demonstrated the successful fabrication of the monolithic integration of a GaAs metalsemiconductor field-effect transistor (MESFET), an AlGaAs/InGaAs laser and a p-n photodetector grown on a SiO₂ backcoated p-Si substrate using selective regrowth by metalorganic chemical vapor deposition (MOCVD). The use of SiO₂ backcoated Si substrate is effective in suppressing unintentional Si autodoping and obtaining a good pinch-off GaAs MESFET. The MESFET with 2.5400 µm² gate exhibited a transconductance of 90 mS/mm and a threshold voltage of 2.2 V. The reliability of the laser on the Si substrate can be improved by the strain-relieved AlGaAs/InGaAs laser with the InGaAs intermediate layer. The longest lifetime of the laser is 8 h at 27. During the GaAs layer growth, the p-n photodetector is formed near the surface of the p-Si substrate by diffusing the As atoms.

Publication: IEICE TRANSACTIONS on Electronics Vol.E76-C No.1 pp.106-111

Publication Date: 1993/01/25

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Type of Manuscript: Special Section INVITED PAPER (Special Issue on Opto-Electronics and LSI)

Category: Integration of Opto-Electronics and LSI Technologies

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Takashi EGAWA, Takashi JIMBO, Masayoshi UMENO, "Optoelectronic Integrated Circuits Grown on Si Substrates" in IEICE TRANSACTIONS on Electronics, vol. E76-C, no. 1, pp. 106-111, January 1993, doi: .
Abstract: We have demonstrated the successful fabrication of the monolithic integration of a GaAs metalsemiconductor field-effect transistor (MESFET), an AlGaAs/InGaAs laser and a p-n photodetector grown on a SiO₂ backcoated p-Si substrate using selective regrowth by metalorganic chemical vapor deposition (MOCVD). The use of SiO₂ backcoated Si substrate is effective in suppressing unintentional Si autodoping and obtaining a good pinch-off GaAs MESFET. The MESFET with 2.5400 µm² gate exhibited a transconductance of 90 mS/mm and a threshold voltage of 2.2 V. The reliability of the laser on the Si substrate can be improved by the strain-relieved AlGaAs/InGaAs laser with the InGaAs intermediate layer. The longest lifetime of the laser is 8 h at 27. During the GaAs layer growth, the p-n photodetector is formed near the surface of the p-Si substrate by diffusing the As atoms.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_1_106/_p

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@ARTICLE{e76-c_1_106,
author={Takashi EGAWA, Takashi JIMBO, Masayoshi UMENO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Optoelectronic Integrated Circuits Grown on Si Substrates},
year={1993},
volume={E76-C},
number={1},
pages={106-111},
abstract={We have demonstrated the successful fabrication of the monolithic integration of a GaAs metalsemiconductor field-effect transistor (MESFET), an AlGaAs/InGaAs laser and a p-n photodetector grown on a SiO₂ backcoated p-Si substrate using selective regrowth by metalorganic chemical vapor deposition (MOCVD). The use of SiO₂ backcoated Si substrate is effective in suppressing unintentional Si autodoping and obtaining a good pinch-off GaAs MESFET. The MESFET with 2.5400 µm² gate exhibited a transconductance of 90 mS/mm and a threshold voltage of 2.2 V. The reliability of the laser on the Si substrate can be improved by the strain-relieved AlGaAs/InGaAs laser with the InGaAs intermediate layer. The longest lifetime of the laser is 8 h at 27. During the GaAs layer growth, the p-n photodetector is formed near the surface of the p-Si substrate by diffusing the As atoms.},
keywords={},
doi={},
ISSN={},
month={January},}

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TY - JOUR
TI - Optoelectronic Integrated Circuits Grown on Si Substrates
T2 - IEICE TRANSACTIONS on Electronics
SP - 106
EP - 111
AU - Takashi EGAWA
AU - Takashi JIMBO
AU - Masayoshi UMENO
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 1993
AB - We have demonstrated the successful fabrication of the monolithic integration of a GaAs metalsemiconductor field-effect transistor (MESFET), an AlGaAs/InGaAs laser and a p-n photodetector grown on a SiO₂ backcoated p-Si substrate using selective regrowth by metalorganic chemical vapor deposition (MOCVD). The use of SiO₂ backcoated Si substrate is effective in suppressing unintentional Si autodoping and obtaining a good pinch-off GaAs MESFET. The MESFET with 2.5400 µm² gate exhibited a transconductance of 90 mS/mm and a threshold voltage of 2.2 V. The reliability of the laser on the Si substrate can be improved by the strain-relieved AlGaAs/InGaAs laser with the InGaAs intermediate layer. The longest lifetime of the laser is 8 h at 27. During the GaAs layer growth, the p-n photodetector is formed near the surface of the p-Si substrate by diffusing the As atoms.
ER -