In this work, a gate-all-around (GAA) tunneling field-effect transistor (TFET) with InGaAs/Si heterojunction for high-performance and low-standby power operations is studied. Gallium (Ga) compositon ($x)$ in In$_{1-x}$Ga$_{x}$As source substantially affects the physical properties related with device performances including lattice constant, bandgap energy, effective tunneling mass, channel mobility, and others. Thus, it is worthy investigating the effect of Ga fraction on performances of the proposed heterojunction TFET. For this goal, the device design and its performance evaluation are carried out by technology computer-aided design (TCAD). Direct-current (DC) performances are investigated in terms of on-state current ($I_{ m{on}})$, off-state current ($I_{ m{off}})$, current ratio ($I_{ m{on}}$/$I_{ m{off}})$, and subthreshold swing ($S$). Furthermore, it is shown that the device with an n-type Si insertion layer between source and channel demonstrates the enhanced DC characteristics.

We have demonstrated the successful fabrication of the monolithic integration of a GaAs metalsemiconductor field-effect transistor (MESFET), an AlGaAs/InGaAs laser and a p-n photodetector grown on a SiO2 backcoated p-Si substrate using selective regrowth by metalorganic chemical vapor deposition (MOCVD). The use of SiO2 backcoated Si substrate is effective in suppressing unintentional Si autodoping and obtaining a good pinch-off GaAs MESFET. The MESFET with 2.5400 µm2 gate exhibited a transconductance of 90 mS/mm and a threshold voltage of 2.2 V. The reliability of the laser on the Si substrate can be improved by the strain-relieved AlGaAs/InGaAs laser with the InGaAs intermediate layer. The longest lifetime of the laser is 8 h at 27. During the GaAs layer growth, the p-n photodetector is formed near the surface of the p-Si substrate by diffusing the As atoms.

The heterointerfaces of Al0.3Ga0.7As/GaAs single quantum wells (SQWs) and the characteristics of SQW lasers grown on Si substrates with Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers (AlGaAs/AlGaP ILs) entirely by metalorganic chemical vapor deposition (MOCVD) are reported. The effects of thermal cycle annealing on the crystallinity and the lasing characteristics of GaAs/Si are also reported. By using the AlGaAs/AlGaP ILs, SQWs with a specular surface morphology and a smoother heterointerface can be grown on a Si substrate. Thermal cycle annealing is found to improve the crystallinity of GaAs/Si and to contribute to room-temperature continuous-wave operation of lasers on Si substrates. The combinations of the techniques of AlGaAs/AlGaP ILs and thermal cycle annealing improve the lasing characteristics: an average threshold current density of 1.83 kA/cm2, an average differential quantum efficiency of 52%, an internal quantum efficiency of 83%, an intrinsic mode loss coefficient of 23cm-1, a differential gain coefficient of 1.9cm/A, and a transparency current density of 266 A/cm2, which are superior to those of the two-step-grown laser on a Si substrate. The improvements of the lasing characteristics result from the smooth heterointerfaces of the AlGaAs/AlGaP ILs.

The heterointerfaces of Al0.3Ga0.7As/GaAs single quantum wells (SQWs) and the characteristics of SQW lasers grown on Si substrates with Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers (AlGaAs/AlGaP ILs) entirely by metalorganic chemical vapor deposition (MOCVD) are reported. The effects of thermal cycle annealing on the crystallinity and the lasing characteristics of GaAs/Si are also reported. By using the AlGaAs/AlGaP ILs, SQWs with a specular surface morphology and a smoother heterointerface can be grown on a Si substrate. Thermal cycle annealing is found to improve the crystallinity of GaAs/Si and to contribute to room-temperature continuous-wave operation of lasers on Si substrates. The combinations of the techniques of AlGaAs/AlGaP ILs and thermal cycle annealing improve the lasing characteristics: an average threshold current density of 1.83 kA/cm2, an average differential quantum efficiency of 52%, an internal quantum efficiency of 83%, an intrinsic mode loss coefficient of 23 cm-1, a differential gain coefficient of 1.9 cm/A, and a transparency current density of 266 A/cm2, which are superior to those of the two-step-grown laser on a Si substrate. The improvements of the lasing characteristics result from the smooth heterointerfaces of the AlGaAs/AlGaP ILs.